A charged particle assessment tool including: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes, each capture electrode adjacent a respective one of the beam apertures, configured to capture charged particles emitted from the sample.

A charged particle assessment tool including: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes, each capture electrode adjacent a respective one of the beam apertures, configured to capture charged particles emitted from the sample.

Embodiments of systems, devices, and methods relate to an electrode standoff isolator. An example electrode standoff isolator includes a plurality of adj acent insulative segments positioned between a proximal end and a distal end of the electrode standoff isolator. A geometry of the adjacent insulative is configured to guard a surface area of the electrode standoff isolator against deposition of a conductive layer of gaseous phase materials from a filament of an ion source.

Embodiments of systems, devices, and methods relate to an electrode standoff isolator. An example electrode standoff isolator includes a plurality of adj acent insulative segments positioned between a proximal end and a distal end of the electrode standoff isolator. A geometry of the adjacent insulative is configured to guard a surface area of the electrode standoff isolator against deposition of a conductive layer of gaseous phase materials from a filament of an ion source.

The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors.

Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors.

Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.