A collimated electron beam is illuminated to a grounded metal mask such that patterns on the mask can be transferred to a substrate identically. In a preferred embodiment, a linear electron source can be provided for enhancing lithographic throughput. The metal mask is adjacent to the substrate, but does not contact with substrate.

In one embodiment, a data processing method is provided for generating writing data from design data and registering the writing data in a charged particle beam writing apparatus. The method includes generating the writing data by performing a plurality of conversion processes on a plurality of pieces of first frame data obtained through division of the design data corresponding to one chip, and performing a plurality of preprocessing processes on a plurality of pieces of second frame data obtained through division of the writing data of the chip, and registering the writing data of the chip in the charged particle beam writing apparatus. The plurality of conversion processes are performed in frame-basis pipeline processing, and the plurality of preprocessing processes are performed in frame-basis pipeline processing. The writing data is registered in the charged particle beam writing apparatus on a frame basis.

A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising: exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.

The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.

Methods for fracturing or mask data preparation are disclosed in which a set of single-beam charged particle beam shots is input; a calculated image is calculated using a neural network, from the set of single-beam charged particle beam shots; and a set of multi-beam shots is generated based on the calculated image, to convert the set of single-beam charged particle beam shots to the set of multi-beam shots which will produce a surface image on the surface. Methods for training a neural network include inputting a set of single-beam charged particle beam shots; calculating a set of calculated images using the set of single-beam charged particle beam shots; and training the neural network with the set of calculated images.

The disclosed embodiments relate to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.

A method for projecting an electron beam onto a target includes correction of the scattering effects of the electrons in the target. This correction is made possible by a calculation step of a point spread function having a radial variation according to a piecewise polynomial function.

A lithography system includes an electron source, a lens, and a stencil mask. The electron source emits a beam of electrons. The lens converts the emitted beam of electrons into a diffuse beam of parallel electrons. The stencil mask is positioned between the lens and a semiconductor wafer with an electron-sensitive resists. The stencil mask has a pattern to selectively pass portions of the diffuse beam of parallel electrons onto the electron-sensitive resist of the wafer.

An electron beam writing apparatus according to the present invention includes a potential regulating member arranged to be upstream of a target object in the case where the target object is placed on a stage, and configured to be set to have a fixed potential being positive with respect to the target object, a potential applying circuit configured to apply a voltage to the target object or the potential regulating member so that the potential regulating member has the fixed potential, and a correction circuit configured to correct a positional deviation of the electron beam on a surface of the target object which occurs in the case where the target object is irradiated with the electron beam in the state in which the potential regulating member has the fixed potential.

An e-beam apparatus is disclosed, the tool comprising an electron optics system configured to project an e-beam onto an object, an object table to hold the object, and a positioning device configured to move the object table relative to the electron optics system. The positioning device comprises a short stroke stage configured to move the object table relative to the electron optics system and a long stroke stage configured to move the short stroke stage relative to the electron optics system. The e-beam apparatus further comprises a magnetic shield to shield the electron optics system from a magnetic disturbance generated by the positioning device. The magnetic shield may be arranged between the positioning device and the electron optics system.