According to one embodiment of the present specification, there can be provided an apparatus for generating plasma, comprising: a chamber configured to provide a generating space for the plasma; an antenna module placed adjacent to the chamber and configured to be connected to a first power source and generate induced electric field in the chamber; an electrode placed adjacent to the chamber and configured to be connected to a second power source and assist in a generation of the plasma; a sensor configured to obtain sensing information related to a status of the plasma; and a controller configured to control the first power source and the second power source.

An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

A method of plasma processing includes generating a glow phase of an electropositive plasma in a plasma processing chamber containing a first species, a second species, and a substrate comprising a major surface and generating an electronegative plasma in an afterglow phase of the electropositive plasma in the plasma processing chamber by combining the electrons of the electropositive plasma with atoms or molecules of the second species. The electropositive plasma includes positive ions of the first species and electrons. The electronegative plasma includes the positive ions and negative ions of the second species. The method further includes, in the afterglow phase, cyclically performing steps of generating neutral particles by applying a negative bias voltage at the substrate and applying a non-negative bias voltage at the substrate. The average velocity of the neutral particles is towards and substantially normal to the major surface of the substrate.

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus has a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

Apparatus include an atmospheric pressure glow discharge (APGD) analyte electrode defining an analyte discharge axis into an APGD volume, and a plurality of APGD counter electrodes having respective electrical discharge ends directed to the APGD volume, wherein the APGD analyte electrode and the APGD counter electrodes are configured to produce an APGD plasma in the APGD volume with a voltage difference between the APGD analyte electrode and one or more of the AGPD counter electrodes. An electrode can be integrated into an ion inlet. Apparatus can be configured to perform auto-ignition and/or provide multi-modal operation through selectively powering electrodes. Electrode holder devices are disclosed. Related methods are disclosed.

A substrate processing apparatus for performing a predetermined processing on a substrate includes a power supply device configured to supply a DC power. The power supply device includes a power supply and a current detection unit configured to detect a current value of a DC power from the power supply. The current detection unit includes a plurality of current sensors used for detecting the current value in the current detection unit and having different detection ranges for the current value, and a switching unit configured to switch the current sensors. The power supply is controlled such that the DC power from the power supply is maintained at a set value based on a detection result of the current detection unit, and the switching unit switches the current sensors depending on the set value of the DC power from the power supply.

A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.