A generator produces output such as delivered power, voltage, current, forward power etc. that follows a prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling sections of the pattern based on measurements taken one or more repetition periods in the past. A variable impedance match network may control the impedance presented to a radio frequency generator while the generator produces the output that follows the prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling variable impedance elements in the match during sections of the pattern based on measurements taken one or more repetition periods in the past.

A portable container is provided for handling an implant. The container comprises a sealed compartment enclosing a fluid of a pre-defined composition and at least one implant configured to be installed in a live subject. The container may comprise at least one electrode made of an electrical conductive material, electrically associated with an electric conductor outside the sealed compartment and configured for applying a plasma generating electric field inside the sealed compartment. An apparatus for plasma treatment of an implant and having an activation device is further provided. The activation device comprises a slot configured to receive a portable container, and an electrical circuit configured to be electrically associated with at least one electrode. The electrical circuit is configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the sealed compartment, when the portable container is disposed in the slot.

A substrate processing apparatus of the present disclosure includes a processing container capable of being vacuum-exhausted, a lower electrode, and an upper electrode. A target substrate can be placed on the lower electrode. The upper electrode is disposed in the processing container so as to face the lower electrode. A substrate processing method of the present disclosure includes performing a first process on the target substrate using an AC voltage without using a DC pulse voltage, and performing a second process on the target substrate using the DC pulse voltage.

Provided is a high frequency power source allowing the user to arbitrarily set a temporal change pattern for the value of high frequency power to be outputted. A high frequency power source 10A according to the present invention includes an output portion 20 configured to output high frequency power to a load 40 via an impedance matching circuit 30, a data storage portion 13A configured to store command data created by a user, and a control portion 12A configured to control the output portion 20 and the impedance matching circuit 30 on the basis of the command data stored in the data storage portion 13A. Each of a plurality of records that constitute the command data includes power command data about a value of high frequency power to be outputted and matching operation command data about whether to activate the impedance matching circuit 30, and the control portion sends a power signal, which is generated on the basis of the power command data, to the output portion and a synchronization signal, which is generated on the basis of the matching operation command data, to the impedance matching circuit.

Provided are methods, apparatuses and systems for enhanced determination of the gas composition of a sample gas using glow discharge optical emission spectroscopy (GD-OES) for gas analysis. A first method comprises: generating one or more oscillating electromagnetic fields within a plasma cell to excite particles within the cell, to produce a glow discharge plasma in the plasma cell, and controlling the operating conditions for the plasma cell while flowing a gas mixture through the plasma cell to maintain glow discharge optical emissions from the plasma within a desired operating range; and monitoring one or more glow discharge optical emissions from the plasma in the plasma cell; wherein said monitoring of the optical emissions comprises measuring the optical emissions, or measuring a signal that correlates with the optical emissions, at twice the plasma excitation frequency; and processing the signal during each excitation cycle of the electromagnetic excitation, to determine the concentration of a gas within a gas mixture flowing through the plasma cell.

A generator produces output such as delivered power, voltage, current, forward power etc. that follows a prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling sections of the pattern based on measurements taken one or more repetition periods in the past. A variable impedance match network may control the impedance presented to a radio frequency generator while the generator produces the output that follows the prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling variable impedance elements in the match during sections of the pattern based on measurements taken one or more repetition periods in the past.

A substrate processing apparatus of the present disclosure includes a processing container capable of being vacuum-exhausted, a lower electrode, and an upper electrode. A target substrate can be placed on the lower electrode. The upper electrode is disposed in the processing container so as to face the lower electrode. A substrate processing method of the present disclosure includes performing a first process on the target substrate using an AC voltage without using a DC pulse voltage, and performing a second process on the target substrate using the DC pulse voltage.

A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

A plasma power supply device includes an AC power supply configured to generate an AC voltage of a predetermined frequency for application to a pair of electrodes by way of a power supply harness which is replaceable partially or wholly to change a wiring length and which is flexible, and a control section configured to set the predetermined frequency of the AC power supply so that the frequency becomes lower as the power supply harness becomes longer.

Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.