A generator produces output such as delivered power, voltage, current, forward power etc. that follows a prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling sections of the pattern based on measurements taken one or more repetition periods in the past. A variable impedance match network may control the impedance presented to a radio frequency generator while the generator produces the output that follows the prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling variable impedance elements in the match during sections of the pattern based on measurements taken one or more repetition periods in the past.

Apparatus include an atmospheric pressure glow discharge (APGD) analyte electrode defining an analyte discharge axis into an APGD volume, and a plurality of APGD counter electrodes having respective electrical discharge ends directed to the APGD volume, wherein the APGD analyte electrode and the APGD counter electrodes are configured to produce an APGD plasma in the APGD volume with a voltage difference between the APGD analyte electrode and one or more of the AGPD counter electrodes. An electrode can be integrated into an ion inlet. Apparatus can be configured to perform auto-ignition and/or provide multi-modal operation through selectively powering electrodes. Electrode holder devices are disclosed. Related methods are disclosed.

The present invention resides in the unifying idea of synchronizing a positive voltage pulse supplied to an electrically conductive or ferromagnetic tube and a exciting negative voltage pulse on a hollow cathode induced on the background of a high-frequency capacitive discharge.

In one embodiment, the invention relates to a method of generating low-temperature plasma in a vacuum chamber comprising a hollow cathode and an electrode, the method comprising the step of igniting the pulsed DC discharge in the hollow cathode wherein the positive voltage pulse at least partially overlaps with the negative voltage pulse, and the positive voltage pulse at least partially overlaps with the negative voltage pulse on the hollow cathode.

In another embodiment, the present invention relates to a method of coating the inner walls of hollow tubes which utilizes the above-mentioned low-temperature plasma generation process.

In another embodiment, the invention relates to a low-temperature plasma generating device comprising a hollow cathode located in the vacuum chamber, a RF plasma source, a pulse DC burst source, and a bipolar pulse source.

In another embodiment, an object of the invention is an apparatus adapted to coat the inner sides of hollow tubes comprising a low-temperature plasma generating device.

Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.

A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

A generator produces output such as delivered power, voltage, current, forward power etc. that follows a prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling sections of the pattern based on measurements taken one or more repetition periods in the past. A variable impedance match network may control the impedance presented to a radio frequency generator while the generator produces the output that follows the prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling variable impedance elements in the match during sections of the pattern based on measurements taken one or more repetition periods in the past.

Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

Provided are methods, apparatus and systems for stabilization of a glow discharge from a plasma. Also provided are methods, apparatus and systems for processing optical signals from a stabilised glow plasma with enhanced signal to noise recovery. A first method comprises: generating an electric field within a plasma cell using an alternating excitation voltage to excite particles within the cell, to produce a glow discharge from a plasma in the plasma cell in a resonant condition; monitoring, in each excitation cycle of the alternating excitation voltage, one or more signals that correlate with glow discharge optical emissions from the plasma in the plasma cell; and, in response to said monitoring, controlling one or more operating conditions for the plasma cell to maintain the glow discharge emissions from the plasma within a desired operating range in each excitation cycle of the alternating excitation voltage. A relatively stable glow discharge optical emission is maintained via dynamic resonant feedback control of operating conditions such as the electric field that is used to excite particles within the plasma cell. The stabilization of the glow plasma can be used in glow discharge optical emission spectroscopy (GD-OES) for gas analysis and in other applications.

A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.