A substrate processing apparatus for performing a predetermined processing on a substrate includes a power supply device configured to supply a DC power. The power supply device includes a power supply and a current detection unit configured to detect a current value of a DC power from the power supply. The current detection unit includes a plurality of current sensors used for detecting the current value in the current detection unit and having different detection ranges for the current value, and a switching unit configured to switch the current sensors. The power supply is controlled such that the DC power from the power supply is maintained at a set value based on a detection result of the current detection unit, and the switching unit switches the current sensors depending on the set value of the DC power from the power supply.

A plasma power supply device includes an AC power supply configured to generate an AC voltage of a predetermined frequency for application to a pair of electrodes by way of a power supply harness which is replaceable partially or wholly to change a wiring length and which is flexible, and a control section configured to set the predetermined frequency of the AC power supply so that the frequency becomes lower as the power supply harness becomes longer.

A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a DC power supply 91 that supplies a DC voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the DC power supply 91 including a first DC power supply unit 101 that supplies a first negative DC voltage V1, a second DC power supply unit 102 that supplies a second negative DC voltage V2 having a higher absolute value than the first negative DC voltage V1, and a selecting circuit 103 that selectively connects the first DC power supply unit 101 and the second DC power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first DC power supply unit 101 and the selecting circuit 103.

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

Provided is a high frequency power source allowing the user to arbitrarily set a temporal change pattern for the value of high frequency power to be outputted. A high frequency power source 10A according to the present invention includes an output portion 20 configured to output high frequency power to a load 40 via an impedance matching circuit 30, a data storage portion 13A configured to store command data created by a user, and a control portion 12A configured to control the output portion 20 and the impedance matching circuit 30 on the basis of the command data stored in the data storage portion 13A. Each of a plurality of records that constitute the command data includes power command data about a value of high frequency power to be outputted and matching operation command data about whether to activate the impedance matching circuit 30, and the control portion sends a power signal, which is generated on the basis of the power command data, to the output portion and a synchronization signal, which is generated on the basis of the matching operation command data, to the impedance matching circuit.

A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

Atomic layer etching (ALE) of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart energy to the electrons to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

A method of plasma processing includes generating a glow phase of an electropositive plasma in a plasma processing chamber containing a first species, a second species, and a substrate comprising a major surface and generating an electronegative plasma in an afterglow phase of the electropositive plasma in the plasma processing chamber by combining the electrons of the electropositive plasma with atoms or molecules of the second species. The electropositive plasma includes positive ions of the first species and electrons. The electronegative plasma includes the positive ions and negative ions of the second species. The method further includes, in the afterglow phase, cyclically performing steps of generating neutral particles by applying a negative bias voltage at the substrate and applying a non-negative bias voltage at the substrate. The average velocity of the neutral particles is towards and substantially normal to the major surface of the substrate.

Methods and apparatus for determination of the gas composition of a sample gas using glow discharge optical emission spectroscopy, in which the method comprises: generating one or more oscillating electromagnetic fields within a plasma cell to excite particles within the cell, to produce a glow discharge plasma in the plasma cell, and controlling the operating conditions for the plasma cell while flowing a gas mixture through the plasma cell to maintain glow discharge optical emissions from the plasma within a desired operating range; and monitoring one or more glow discharge optical emissions from the plasma in the plasma cell by measuring the optical emissions, or measuring a signal that correlates with the optical emissions, at twice the plasma excitation frequency; and processing the signal during each excitation cycle of the electromagnetic excitation, to determine the concentration of a gas within a gas mixture flowing through the plasma cell.

A portable container is provided for handling an implant. The container comprises a sealed compartment enclosing a fluid of a pre-defined composition and at least one implant configured to be installed in a live subject. The container may comprise at least one electrode made of an electrical conductive material, electrically associated with an electric conductor outside the sealed compartment and configured for applying a plasma generating electric field inside the sealed compartment. An apparatus for plasma treatment of an implant and having an activation device is further provided. The activation device comprises a slot configured to receive a portable container, and an electrical circuit configured to be electrically associated with at least one electrode. The electrical circuit is configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the sealed compartment, when the portable container is disposed in the slot.