A device includes a microwave generation unit that generates a microwave having a bandwidth, an output unit, a directional coupler, and a measurement unit. The microwave generation unit generates a microwave of which power is pulse-modulated to have a high level and a low level. The measurement unit determines a first high measured value and a first low measured value respectively indicating a high level and a low level of power of travelling waves in the output unit on the basis of parts of the travelling waves output from the directional coupler. The microwave generation unit controls high level power of the pulse-modulated microwave on the basis of and averaged first high measured value and high level setting power, and controls low level power of the pulse-modulated microwave on the basis of an averaged first low measured value and low level setting power.

Apparatus and method for plasma synthesis of carbon nanotubes couple a plasma nozzle to a reaction tube/chamber. A process gas comprising a carbon-containing species is supplied to the plasma nozzle. Radio frequency radiation is supplied to the process gas within the plasma nozzle, so as to sustain a plasma within the nozzle in use, and thereby cause cracking of the carbon-containing species. The plasma nozzle is arranged such that an afterglow of the plasma extends into the reaction tube/chamber. The cracked carbon-containing species also pass into the reaction tube/chamber. The cracked carbon-containing species recombine within the afterglow, so as to form carbon nanotubes in the presence of a catalyst.

The present disclosure provides a microwave transmission apparatus. The microwave transmission apparatus includes a waveguide, configured to transmit microwaves emitted from a microwave source to a load; and an impedance matching structure, disposed in the waveguide the waveguide. The waveguide includes a microstrip interdigital capacitor. The impedance before the input end of the impedance matching structure is matched with the impedance after the input end of the impedance matching structure by adjusting an equivalent capacitance formed by the microstrip interdigital capacitor and/or a position of the microstrip interdigital capacitor along the extending direction of the waveguide.

A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.

A microwave plasma source that generates a microwave plasma in a processing space in which a target substrate is processed, includes: a microwave generation part for generating microwave; a waveguide through which the microwave generated by the microwave generation part propagates; an antenna part including a slot antenna having a predetermined pattern of slots formed therein and being configured to radiate the microwave propagating through the waveguide into the processing space and a microwave-transmitting plate being made of a dielectric material and being configured to transmit the microwave radiated from the slots therethrough and supply the microwave into the processing space; a temperature detector for detecting a temperature at a predetermined position in a microwave propagation path leading to the slot antenna; and an abnormality detection part for receiving the temperature detected by the temperature detector and detect an abnormality in the microwave propagation path based on the detected temperature.

A radiation element for radiating a microwave into the heating chamber at least one hollow dielectric member in which a gas is sealed, the hollow dielectric member having electrodes and a control unit having a plasma control unit for controlling the state of the hollow dielectric member and a current adjustment unit for adjusting a current to be applied to the electrodes of the hollow dielectric member under the control of the plasma control unit, the current adjustment unit being connected to the electrodes; and wherein the plasma control unit controls the state of the hollow dielectric member to put into one of states of: a plasma state in which the microwave is reflected by the gas; a plasma state in which the microwave is absorbed by the gas; and a gas state in which the microwave is allowed to be transmitted through the gas.

Exemplary systems according to embodiments of the present technology include a housing that defines a process chamber and a waveguide cavity. A first conductive plate is disposed within the housing. The system also includes a second conductive plate positioned within the housing and at least partially defining the waveguide cavity. The second conductive plate is vertically translatable within the housing to adjust a distance between the first conductive plate and the second conductive plate to affect modes of electromagnetic radiation propagating within the waveguide cavity. The systems also include one or more electronics sets that are configured to transmit the electromagnetic radiation into the waveguide cavity to produce plasma from at least one process gas delivered within the process chamber.