A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).

Provided is an analytical device including: a self-flowing microfluidic system, having a sample extraction location, at least one sample preparation location, and at least one sample analytical chamber; wherein the sample extraction location, the sample preparation location, and the at least one sample analytical chamber are interconnected by at least one microfluidic channel on a first substrate; and a signal readout system, having at least one sample analysis elements, and a data gathering and processing element.

Provided is an analytical device including: a self-flowing microfluidic system, having a sample extraction location, at least one sample preparation location, and at least one sample analytical chamber; wherein the sample extraction location, the sample preparation location, and the at least one sample analytical chamber are interconnected by at least one microfluidic channel on a first substrate; and a signal readout system, having at least one sample analysis elements, and a data gathering and processing element.

A self-flowing microfluidic analytical chip may undergo spontaneous flow of a fluidic sample through microfluidic channels without an internal or external pump or corresponding pumping support hardware for fluid pumping. A self-flowing microfluidic analytical device includes sample preparation locations, sample analysis locations, and sample extraction locations connected by a network of microfluidic channels. Self-flowing characteristics of a microfluidic analytical chip result from maskless patterning of a substrate surface, where sequential passes of a patterning head preserve, rather than destroy, a pattern of surface functionalization. Self-flowing properties may be preserved by avoiding use of mask-removing solvents common to mask-removal steps in traditional microfluidic chip manufacturing processes.

A self-flowing microfluidic analytical chip may undergo spontaneous flow of a fluidic sample through microfluidic channels without an internal or external pump or corresponding pumping support hardware for fluid pumping. A self-flowing microfluidic analytical device includes sample preparation locations, sample analysis locations, and sample extraction locations connected by a network of microfluidic channels. Self-flowing characteristics of a microfluidic analytical chip result from maskless patterning of a substrate surface, where sequential passes of a patterning head preserve, rather than destroy, a pattern of surface functionalization. Self-flowing properties may be preserved by avoiding use of mask-removing solvents common to mask-removal steps in traditional microfluidic chip manufacturing processes.

A spatially selective surface functionalization device configured to generate a pattern of micro plasmas and functionalize a substrate surface may include: a pattern management system, a patterning head, and a gas delivery system, wherein the gas delivery system provides a primed gas mixture for forming a plasma between the patterning head and a target substrate below the patterning head. A patterning head may generate a distribution of micro plasmas from individual directed beams of electrons with spatial separation. A pattern management system may store and manipulate information about a pattern of surface functionalization and generate instructions for regulating a distribution of micro plasmas that functionalize a substrate surface.

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

A charged particle emission device includes a pre-emission state detector configured to detect a pre-emission charged state which is a charged state of the charged object before charged particles are emitted, an emission time generator configured to generate an emission time based on a past emission time of charged particles and a charged state of the charged object after the emission, emission processor circuitry configured to emit charged particles to the charged object which is in the pre-emission charged state based on the generated emission time, a post-emission state detector configured to detect a post-emission charged state which is a charged state of the charged object after the charged particles are emitted, machine learning processor circuitry configured to cause a machine learning model to learn a correspondence among the pre-emission charged state, the post-emission charged state, and the emission time generated by the emission time generator.