Apparatus and methods for nanoplasma switches are disclosed. In certain embodiments, a nanoplasma switching system includes a nanoplasma radio frequency (RF) switch that receives an RF signal, and a nanoplasma DC switch that receives a DC bias voltage. The nanoplasma DC switch is positioned adjacent to but spaced apart from the nanoplasma RF switch. The nanoplasma DC switch induces a nanoplasma through the nanoplasma RF switch when the DC bias voltage is set to a first voltage level. By implementing the nanoplasma switching system in this manner, DC bias to turn on or off the nanoplasma RF switch can be realized without needing to use passive components such as DC blocking capacitors, choke inductors, or baluns for isolation.

The invention relates to a nanoplasma switch device, comprising: multiple electrically isolated electrodes; a gap separating the two electrodes; wherein the gap has a width which is dimensioned to effect the generation of a plasma by electric-field electron emission.

An apparatus, for treating a substrate in a plasma processing chamber with an electromagnet power source with leads. An edge ring body surrounds the substrate. An electromagnet is embedded within or attached to a surface of the edge ring body, extending more than half way around the edge ring, wherein the electromagnet is configured to provide a magnetic flux greater than 0.1 mTesla along more than half of an outer edge of the substrate, wherein the electromagnet comprises at least one winding, wherein the leads of the electromagnet power source are electrically connected to the at least one winding.

Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.

A method activates the inner surface of a substrate tube via plasma etching with a fluorine-containing etching gas. An exemplary method includes the steps of (i) supplying a supply flow of gas to the interior of a substrate tube, wherein the supply flow includes a main gas flow and a fluorine-containing etching gas flow, (ii) inducing a plasma via electromagnetic radiation to create a plasma zone within the substrate tube's interior, and (iii) longitudinally reciprocating the plasma zone over the length of the substrate tube between a reversal point near the supply side and a reversal point near the discharge side of the substrate tube. The flow of the fluorine-containing etching gas is typically provided when the plasma zone is near the supply side reversal point.

Apparatus for and method of cleaning an electrically conductive surface of an optical element in a system for generating extreme ultraviolet radiation in which electrically conductive surface is used as an electrode for generating a plasma which cleans the surface.

In an example of an embodiment, a plasma processing apparatus includes a processing container, a stage, an upper electrode, an inlet, and a waveguide device. The stage is provided within the processing container. The upper electrode is provided above the stage, to interpose a space within the processing container. The inlet is configured to introduce high-frequency waves. The high-frequency waves are VHF waves or UHF waves. The inlet is provided at an end of the space in the lateral direction, and extends in a circumferential direction around a central axis of the processing container. The waveguide device is configured to supply high-frequency waves to the inlet. The waveguide device includes a resonator that provides a waveguide. The waveguide of the resonator extends in the circumferential direction around the central axis and extends in the direction in which the central axis extends to be connected to the inlet.

A LSP broadband light source is disclosed. The light source may include a gas containment structure. The light source may include multiple jet nozzles, wherein the jet nozzles are configured to generate supersonic gas jets and direct the supersonic gas jets to collide within the gas containment structure to form a localized high-pressure region at the collision point. The light source may include a primary laser pump source, wherein the primary laser pump source is configured to direct a primary pump beam to a localized high-pressure region formed at the collision point. The light source may include a pulsed-assisting laser source, wherein the pulsed-assisting laser source is configured to direct a pulsed-assisting beam to the localized high-pressure region at the collision point. The light source may include a light collector element configured to collect broadband light emitted from the plasma.

There is provided a plasma processing method comprising: continuously introducing electromagnetic waves into a chamber of a plasma processing apparatus, the electromagnetic waves being VHF waves or UHF waves, the electromagnetic waves being introduced into the chamber so as to form standing waves within the chamber along a lower surface of an upper electrode of the plasma processing apparatus; periodically applying a negative voltage to the upper electrode while performing said continuously introducing the electromagnetic waves; and supplying a processing gas into the chamber only during a period in which the negative voltage is applied to the upper electrode.

A method includes forming a first masking layer over a substrate, the first masking layer including a first mask line and a second mask line, heating respective top surfaces of the first mask line and the second mask line with polarized light, and forming a second masking layer over the first masking layer with an area selective deposition process. The second masking layer is thinner over a sidewall of the first mask line than over a top surface of the first mask line.