H01J37/32339

SYSTEM AND METHOD FOR SEMICONDUCTOR STRUCTURE
20260123297 · 2026-04-30 ·

A method includes forming a first masking layer over a substrate, the first masking layer including a first mask line and a second mask line, heating respective top surfaces of the first mask line and the second mask line with polarized light, and forming a second masking layer over the first masking layer with an area selective deposition process. The second masking layer is thinner over a sidewall of the first mask line than over a top surface of the first mask line.