A system for laser-induced plasma micromachining of a work-piece includes a dielectric fluid, a dielectric fluid supply device, a laser, a processor, and a memory. The dielectric fluid supply device is arranged to hold a work-piece in the dielectric fluid or to direct the dielectric fluid onto the work-piece. The laser is arranged to emit a pulsed laser-beam. The processor is in electronic communication with the laser. The memory is in electronic communication with the processor. The memory includes programming code for execution by the processor. The programming code is programmed to direct the laser to deliver the pulsed laser-beam into the dielectric fluid to create a plasma generated at a focal point of the pulsed laser-beam in the dielectric fluid to micromachine, using the plasma, the work-piece disposed adjacent to the focal point.

A plasma deposition apparatus includes a first plasma source that can produce a first plasma confined in a magnetic field, which includes: a gas distribution device configured to supply a gas, a closed-loop electrode defining a center region therein and a central axis through the central region and one or more magnets that are outside an inner surface of the closed-loop electrode. The one or more magnets can produce the magnetic field in the center region. The closed-loop electrode and the one or more magnets can produce the first plasma of activated atoms, molecules, electrons, and ions from the gas. A collimator can collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and direct the ions to a substrate.

The invention relates to a device for pulsed laser deposition and a substrate with a substrate surface, which device includes: a substrate holder for holding the substrate; a target arranged facing the substrate surface of the substrate; a velocity filter arranged between the substrate and the target; a pulsed laser directed onto the target at a target spot for generating a plasma plume of target material; and a plasma hole plate arranged between the target and the substrate. The plasma hole plate has a plasma passage opening divided in an upstream section and a downstream section by a dividing plane. The target spot coincides with the dividing plane, and the surface area of the upstream section is larger than the surface area of the downstream section.

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.

A plasma treatment method according to the present disclosure includes a step (a) for continuously introducing electromagnetic waves into a chamber of a plasma treatment device. The electromagnetic waves are VHF waves or UHF waves. The electromagnetic waves are introduced into the chamber so as to form standing waves in the chamber along the lower surface of an upper electrode of the plasma treatment device. The plasma treatment method further includes a step (b) for periodically applying a negative voltage to the upper electrode while the step for continuously introducing the electromagnetic waves is being carried out. The plasma treatment method further includes a step (c) for supplying a treatment gas into the chamber only during the period of applying the negative voltage to the upper electrode.

Apparatus for and method of cleaning an electrically conductive surface of an optical element in a system for generating extreme ultraviolet radiation in which electrically conductive surface is used as an electrode for generating a plasma which cleans the surface.

A method for a laser-induced excitation of a radio frequency plasma at a low air pressure using a hardware device. The hardware device includes a pulsed laser source, a convex lens, a target material, an ion source system, and a radio frequency power supply system. When an air pressure value of the gas in the ion source system is lower than 1 Pa, and it's difficult to generate the radio frequency plasma, bombarding the target material in the ion source system by a pulsed laser beam; after the ion source system reaches a relatively high vacuum degree, providing gas to generate a plasma for the ion source system, providing the radio frequency electromagnetic field for the internal environment of the ion source system; outputting the high-intensity laser pulse; focusing the laser pulse to form a light spot with a high-power density.

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.

The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

The invention relates to a method for pulsed laser deposition including the steps of: providing a target and a substrate facing the target; irradiating a spot on the target with a pulsed laser beam to generate a plasma plume of target material and depositing the plasma plume on the substrate; and smoothing the surface structure of the spot on the target prior to irradiating the spot with a pulsed laser beam.