An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y.sub.2O.sub.3, over 0 mol % to 60 mol % of ZrO.sub.2, and 0 mol % to 9 mol % of Al.sub.2O.sub.3.

A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.

Methods for preparing a void-free protective coating are disclosed herein. The void-free protective coating is used on a dielectric window having a central hole, which is used in a plasma treatment tool. A first protective coating layer is applied to the window, leaving an uncoated annular retreat area around the central hole. The first protective coating layer is polished to produce a flat surface and fill in any voids on the window. A second protective coating layer is then applied upon the flat surface of the first protective coating layer to obtain the void-free coating. This increases process uptime and service lifetime of the dielectric window and the plasma treatment tool.

A method for forming a coating on a component of a substrate processing system includes arranging the component in a processing chamber and applying a ceramic material to form the coating on one or more surfaces of the component. The ceramic material is comprised of a mixture including a rare earth oxide and having a grain size of less than 150 nm and is applied while a temperature within the processing chamber is less than 400° C. The coating has a thickness of less than 30 μm. A heat treatment process is performed on the coated component in a heat treatment chamber. The heat treatment process includes increasing a temperature of the heat treatment chamber from a first temperature to a second temperature that does not exceed a melting temperature of the mixture over a first period and maintaining the second temperature for a second period.

Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.

A method 14 for the controlled removal of a protective layer 3 from a surface of a component 10, wherein the component comprises: a base body 1; an intermediate layer 2, which at least partially covers the base body; and said protective layer 3, which comprises an amorphous solid, in particular an amorphous nonmetal, in particular amorphous ceramic, and at least partially covers the intermediate layer;
wherein the method comprises the following steps: bringing 11 the protective layer 3 into contact with an etching or solvent medium 4; and removing 12 the protective layer 3 under the action of the etching or solvent medium 4 until the intermediate layer 2 is exposed;
and wherein the etching or solvent medium causes a first etching or dissolving speed of the protective layer and a second etching or dissolving speed of the intermediate layer and wherein the first etching or dissolving speed is greater than the second etching or dissolving speed. The invention furthermore relates to a method for replacing an old protective layer on a component, a method for operating a thin-film process facility, a component for use in a thin-film process facility, and a production method for the component.

Sealing various machined component parts used in plasma etching chambers using an Atomic Layer Deposition (ALD) coating. By sealing the component parts with the ALD layer, surface erosion/etch caused by repeated exposure to plasma during workpiece fabrication is eliminated or significantly mitigated. As a result, unwanted particle generation, caused by erosion, is eliminated or significantly reduced, preventing contamination within the plasma etching chamber.

Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.

A component, a method of manufacturing a component, and a method of cleaning a component is provided. The component includes a gas flow system within the component, wherein the gas flow system fluidly couples one or more inlet holes and one or more outlet holes. The manufacturing of the component results in an arc shaped groove and a circumferential groove created in the body of the ring. The component undergoes one or more cleaning operations, including rinsing, baking, or purging operations. The cleaning operations remove debris or particles in or on the component, where the debris or particles can be caused during manufacturing of the component, or during use of the component in a semiconductor processing system.