A method for processing one or more substrates in a plasma processing chamber is provided. A plurality of cycles is provided, wherein each cycle comprises providing a pre-coat process, processing at least one substrate within the plasma processing chamber, and cleaning the plasma processing chamber. The providing the pre-coat process comprises one or more cycles of depositing a silicon containing pre-coat layer and depositing a carbon containing pre-coat layer.

A plasma lining structure is used in a process chamber to block direct line-of-sight for plasma generated within to grounded surface. The plasma lining structure includes a plurality of sections to cover at least one or more portions of an inside surface of a plasma confinement structure disposed in the process chamber. The sections of the plasma lining structure are positioned between a plasma region and the sidewall of the plasma confinement structure, when the plasma lining structure and the plasma confinement structure are disposed in the plasma chamber, such that the sections directly face the plasma region.

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

A sorption structure defined in a plasma process chamber includes an inner layer having one or more heating elements to heat the sorption structure, a middle section having a coolant flow delivery network through which a coolant circulates to cool the sorption structure to a temperature to allow selective adsorption of by-products released in the process chamber, and a vacuum flow network that is connected to a vacuum line to create low pressure vacuum and remove the by-products released from the sorption structure. A lattice structure is defined over the middle section, the lattice structure includes network of openings defined in a plurality of layers to increase surface area for improved by-products adsorption. The inner section is disposed adjacent to the middle section. An outer layer of the lattice structure faces an interior region of the chamber. The openings in the layers of the lattice structure progressively increase in size from the inner layer to the outer layer, such that the outer layer provides a larger surface area for adsorbing the by-products. The vacuum line is activated during adsorption step to create a low pressure region in the lattice structure relative to a pressure in the chamber so as to adsorb the by-products. Desorption step is performed in conjunction with WAC/CWAC to reliably remove the accumulated by-products from the sorption wall.

Methods for revitalizing components of a plasma processing apparatus that includes a sensor for detecting a thickness or roughness of a peeling weakness layer on a protective surface coating of a plasma processing tool and/or for detecting airborne contaminants generated by such peeling weakness layer. The method includes detecting detrimental amounts of peeling weakness layer buildup or airborne concentration of atoms or molecules from the peeling weakness layer, and initiating a revitalization process that bead beats the peeling weakness layer to remove it from the component while maintaining the integrity of the protective surface coating.

A system, having: an RF power source; an RF matching network electrically coupled to the RF power source; an impedance matching circuit electrically coupled to the RF matching network, wherein the impedance matching circuit has a first adjustable capacitor connected in series with the RF matching network and a second adjustable capacitor connected in parallel with the first capacitor; and an inductive process load electrically coupled to the impedance matching circuit.

The present invention provides a method for plasma dicing a substrate. The substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas and at least one device structure. The substrate is placed onto a support film on a frame to form a work piece. A process chamber having a plasma source is provided. A work piece support is provided within the plasma process chamber. The work piece is placed onto the work piece support. A plasma is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the support film while the support film is exposed to the generated plasma.

An aluminum or copper alloy sputtering chamber includes a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the front surface A coating of titanium particles is formed on the sputter trap.

There is provided a method of processing a substrate comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate. The method includes: (a) primarily dry-etching silicon nitride layers of the ONO stack; (b) producing oxygen radicals and processing silicon oxide layers of the ONO stack with the oxygen radicals; and (c) secondarily dry-etching the silicon nitride layers of the ONO stack.