Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.

Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

Embodiments disclosed herein include an RF return assembly. In an embodiment, the RF return assembly comprises a first plate with a flange, where a first hole and a second hole pass through the flange. The RF return assembly may further comprise a second plate over the first plate, and a first body positioned above the flange. In an embodiment, the RF return assembly further comprises a second body positioned below the flange, where the first body is affixed to the second body by a pillar that passes through the first hole. In an embodiment, the RF return assembly further comprises a spring attached between the second plate and the second body, where the spring passes through the second hole, and a conductive band to electrically couple the first body to the flange.

A substrate processing apparatus includes a vacuum container, a placing part provided inside the vacuum container and having a placing surface on which a substrate is placed, and a ceiling member provided above the placing part. The ceiling member includes a fixed member fixed to the vacuum container, a movable member attached to the fixed member and having a first facing surface facing the placing surface, a spacer sandwiched between the fixed member and the movable member, a first seal member provided between the fixed member and the spacer, a second seal member provided between the movable member and the spacer, and a plurality of adjustment bolts screwed into the fixed member through the movable member.

Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the second ring component of the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.

Apparatus and methods for forming and using internally divisible physical vapor deposition (PVD) process chambers using shutter disks are provided herein. In some embodiments, an internally divisible process chamber may include an upper chamber portion having a conical shield, a conical adaptor, a cover ring, and a target, a lower chamber portion having a substrate support having inner and outer deposition rings, and wherein the substrate support is vertically movable, and a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities.

In some examples, a double seal arrangement for a substrate processing chamber comprises a radially inner barrier seal disposed within a barrier seal gland. The barrier seal gland includes an inner toe and an outer toe. A radially outer vacuum seal is disposed within a vacuum seal gland. The vacuum seal gland includes at least an inner toe. A first venting pathway is provided between the inner toe of the vacuum seal gland and the outer toe of the barrier seal gland, and a second venting pathway is provided between the outer toe of the barrier seal gland and the inner toe of the barrier seal gland. A third venting pathway is in communication at least with the inner toe of the barrier seal gland, and a vacuum source connected to at least one of the first, second, and third venting pathways.

A plasma processing apparatus includes a cylindrical chamber defining a processing space in which a substrate is processed, and a member constituting an outer circumference of the cylindrical chamber. The member includes at least one flow path inlet configured to allow a heat transfer medium to flow in therethrough, at least one flow path outlet configured to allow the heat transfer medium to flow out therethrough, at least one flow path connecting the flow path inlet and the flow path outlet to one another to allow the heat transfer medium to flow therethrough, and at least one folded-back portion formed in the flow path. The flow path inlet and the flow path outlet are located close to each other, and the flow path is formed at a specific angle in a circumferential direction of the member.