In the present invention, a high-voltage side electrode component further includes a conductive film disposed on an upper surface of a dielectric electrode independently of a metal electrode. The conductive film is disposed between at least one gas ejection port and the metal electrode in plan view, and the conductive film is set to ground potential.

A plasma gun for treating a tumor in vivo and a use method thereof. The plasma gun includes a generator component including an ionization device and a shield element, and a discharge component. The ionization device is provided at the shield element, and the discharge component is connected to an end of the shield element. The present invention overcomes the problem that a low-temperature plasma jet cannot contact a tumor in vivo. The plasma gun reaches the interior of the tumor, promoting the treatment of the plasma to the tumors. It is suitable for the application in clinical treatment. As compared with the conventional radiotherapy, chemotherapy and surgery, the present invention has the advantages of selectivity on cancer cells and little side effects. The plasma directly reaches the tumor lesion, which has good therapeutic effect and avoids the impact on normal tissues.

A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

A plasma source array is provided. The plasma source array includes a plurality of hybrid plasma sourcelets disposed on a base plate. Each hybrid sourcelet includes a dielectric tube having an inner area and an outer surface; an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube; a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube; and a gas injection system configured to supply one or more process gases to the inner area of the dielectric tube. Plasma processing apparatuses incorporating the plasma source array and methods of use are also provided.

A plasma processing apparatus includes a plasma processing chamber, a substrate support including a bias electrode, an RF power source configured to generate RF power to generate plasma in the plasma processing chamber, an edge ring disposed to surround a substrate on the substrate support, a ring electrode disposed to surround the edge ring, a first bias RF power source and a second bias RF power source. The first bias RF power source is configured to supply a first bias RF power to the bias electrode, the first bias RF power having a first frequency and a first power level. The second bias RF power source is configured to supply a second bias RF power to the ring electrode, the second bias RF power having the first frequency and a second power level and the second bias RF power being synchronized with the first bias RF power.

A versatile high throughput deposition apparatus includes a process chamber and a workpiece platform in the process chamber. The workpiece platform can hold a plurality of workpieces around a center region and to rotate the plurality of workpieces around the center region. Each of the plurality of workpieces includes a deposition surface facing the center region. A gas distribution system can distribute a vapor gas in the center region of the process chamber to deposit a material on the deposition surfaces on the plurality of workpieces. A magnetron apparatus can form a closed-loop magnetic field near the plurality of workpieces. The plurality of workpieces can be electrically biased to produce a plasma near the deposition surfaces on the plurality of workpieces.

A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

A fixed outer support flange (flange 1) is formed to circumscribe an electrode within a plasma processing system. Flange 1 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. An articulating outer support flange (flange 2) is formed to circumscribe flange 1. Flange 2 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The vertical portion of flange 2 is positioned concentrically outside of the vertical portion of flange 1. Flange 2 is spaced apart from flange 1 and moveable along the vertical portion of flange 1. Each of a plurality of electrically conductive straps has a first end portion connected to flange 2 and a second end portion connected to flange 1.

A tunable edge sheath (TES) system includes a coupling ring configured to couple to a bottom surface of an edge ring that surrounds a wafer support area within a plasma processing chamber. The TES system includes an annular-shaped electrode embedded within the coupling ring. The TES system includes a plurality of radiofrequency signal supply pins coupled to the electrode within the coupling ring. Each of the plurality of radiofrequency signal supply pins extends through a corresponding hole formed through a bottom surface of the coupling ring. The TES system includes a plurality of radiofrequency signal filters respectively connected to the plurality of radiofrequency supply pins. Each of the plurality of radiofrequency signal filters is configured to provide a high impedance to radiofrequency signals used to generate a plasma within the plasma processing chamber.

The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.