Disclosed herein are tools and methods for subtractively patterning metals. These tools and methods may permit the subtractive patterning of metal (e.g., copper, platinum, etc.) at pitches lower than those achievable by conventional etch tools and/or with aspect ratios greater than those achievable by conventional etch tools. The tools and methods disclosed herein may be cost-effective and appropriate for high-volume manufacturing, in contrast to conventional etch tools.

Embodiments of liners for use in a process chamber are provided herein. In some embodiments, a liner for use in a process chamber includes an upper liner having a top plate with a central opening and a tubular body extending downward from an outer peripheral portion of the top plate, wherein the top plate has a contoured inner surface having a first step with a first inner diameter and a second step with a second inner diameter greater than the first inner diameter, and wherein the tubular body has an opening for transferring a substrate therethrough; and a lower liner abutting a bottom surface of the tubular body, wherein the lower liner extends radially inward from the tubular body and includes a plurality of radial slots arranged around the lower liner, wherein the upper liner and the lower liner form a C-shaped cross-section.

A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.

A switch device of an embodiment includes a first electrode including a first layer including at least one selected from the group consisting of B, C, Al, Si, and Ga, a second electrode separated from the first electrode, a first grid disposed between the first electrode and the second electrode, and a second grid disposed between the first grid and the second electrode.

The invention provides a ceramic device enabling more complex, elaborate patterns for resistance heating elements or electrodes. A ceramic device includes a ceramic substrate consisting of a ceramic sintered body and including at least a base layer, an intermediate layer laminated over the base layer, and an overlayer laminated over the intermediate layer; and an electrifiable resistance heating element or electrode having a predetermined pattern extending in a planar shape and being embedded in the ceramic substrate. A horizontal surface is defined in the upper surface of the intermediate layer, along which the resistance heating element or electrode is arranged, and the overlayer is laminated onto the upper surface of the intermediate layer to cover the resistance heating element or electrode.

The invention relates to a device (10) for treating a liquid with a plasma, wherein the device (10) has a high-voltage electrode (20) as well as a liquid-permeable ground electrode device (30). The ground electrode device (30) has a flat, conductive region (32) and a porous region (34) arranged on the flat, conductive region (32), wherein the conductive region (32) is liquid-permeable along its flat extension. A discharge space (40) is formed between the ground electrode device (30) and the high-voltage electrode (20). A first dielectric (50) is arranged on the high-voltage electrode (20) so that a plasma can be generated in the discharge space (40) by means of a dielectric barrier discharge. Moreover, the device (10) has an initial flow volume (60) into which the liquid (12) can be conducted, and that is surrounded by a wall (62). At least in a first region, the wall (62) of the initial flow volume (60) has the ground electrode device (30) such that the initial flow volume (60) is connected to the discharge space (40) in a liquid permeable manner via the ground electrode device (30).

A member to be used in a substrate processing apparatus is provided. The member is formed of aluminum containing silicon, and the silicon has a particle diameter of 1 m or less.

The present disclosure relates to a liquid chip for an electron microscope including a lower chip, an upper chip, and a waterway space part for supplying a liquid sample, and may attach a transmissive thin film layer made of a graphene material having an excellent bulging resistance property to a plurality of holes formed in a waterway space part to increase the thickness of a support not operating as a transmissive window to be larger than the conventional one, thereby supplying the liquid sample more stably and minimizing the loss of a spatial resolution and also suppressing the bulging phenomenon of the transmissive window.

To this end, according to the present disclosure, the lower chip includes a lower substrate formed with a lower cavity; a lower support disposed on the upper surface of the lower substrate, and formed with a plurality of lower holes in the lower cavity region; a spacer located on both ends of the lower support of the lower hole; and a lower transmissive thin film layer attached on the lower support so as to cover the lower hole, the upper chip includes an upper substrate formed with an upper cavity; an upper support disposed on the upper surface of the upper substrate, and formed with a plurality of upper holes in the upper cavity region; and an upper transmissive thin film layer having a constant bulging resistance property attached on the upper support so as to cover the plurality of upper holes, the waterway space part is formed by laminating the upper support disposed on the upper surface of the upper substrate on the spacer of the lower chip, and the transmissive thin film layer is located inside the waterway space part.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

High-entropy ultra-high temperature ceramics (HE-UHTC) coatings deposited on substrates, as well methods for depositing the HE-UHTC coatings on the substrates, are provided. An HE-UHTC electrode can be fabricated via spark plasma sintering (SPS) and then a thin coating of the HE-UHTC can be deposited in a precision-controlled manner on a substrate via an electro-spark deposition process.