A method includes anisotropically etching an etching target layer of a target object through an opening of the target object by generating plasma of a first gas within a processing vessel in which the target object is accommodated; and then forming a film on an inner surface of the opening by repeating a sequence comprising: a first process of supplying a second gas into the processing vessel; a second process of purging a space within the processing vessel; a third process of generating plasma of a third gas containing an oxygen atom within the processing vessel; and a fourth process of purging the space within the processing vessel. The first gas contains a carbon atom and a fluorine atom. The second gas contains an aminosilane-based gas. The etching target layer is a hydrophilic insulating layer containing silicon. Plasma of the first gas is not generated in the first process.

A nozzle according to the invention includes a liquid flow passage through which a liquid flows, a gas flow passage through which a gas flows, the gas flow passage communicating with the liquid flow passage and feeding the gas to the liquid flow passage, and a plasma generating mechanism for generating plasma in the gas fed from the gas flow passage to the liquid flow passage, in which the plasma generating mechanism includes a first electrode provided so as to be exposed to an inside of the liquid flow passage, a second electrode provided so as not to be exposed to the inside of the liquid flow passage and so as to be exposed to an inside of the gas flow passage, and a power source for applying a predetermined voltage across the first electrode and the second electrode, and in which the liquid with which the gas including the generated plasma is mixed as bubbles having a predetermined diameter is spouted.

A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5X/Rp5000 is satisfied.

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

A ceramic heater includes a ceramic substrate including, on an upper surface, a wafer mount surface that receives a wafer, and a heater electrode embedded in an inside of the ceramic substrate. The ceramic substrate includes a core portion and a surface layer portion disposed on a surface of the core portion. The surface layer portion has volume resistivity higher than volume resistivity of the core portion. The core portion has thermal conductivity higher than thermal conductivity of the surface layer portion. The surface layer portion is disposed over an area of at least one of a side surface of the core portion and an upper surface of the core portion, the area being not covered with the wafer.

A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit.

A method and apparatus for reproducing a component of a semiconductor manufacturing apparatus, and a reproduced component are provided. The method may include a preparing step of preparing a damaged component of a semiconductor manufacturing apparatus, a first cleaning step of cleaning the damaged component, a masking step of masking at least one of areas including an undamaged part of the damaged component, a reproduced part forming step of forming a reproduced part on the damaged component using a chemical vapor deposition (CVD), a post-grinding step of grinding the damaged component with the reproduced part, and a second cleaning step of cleaning the damaged component with the reproduced part.

In an embodiment, a plasma processing system includes a vacuum chamber, a substrate holder configured to hold a substrate to be processed where the substrate holder is disposed in the vacuum chamber. The system further includes an electron source disposed above a peripheral region of the substrate holder, the electron source being configured to generate an electron beam towards the peripheral region of the substrate holder.