In a method for surface treatment of an upper electrode, a first step is performed to roughen a facing surface of the upper electrode facing a lower electrode while depositing a CF-based deposit on the facing surface by using a plasma of a processing gas by supplying a first and second high frequency powers to the lower and upper electrode. A second step is performed to remove a part of the CF-based deposit by using a plasma of a processing gas by supplying the second high frequency power to the upper electrode only, and a third step is performed to remove the CF-based deposit remaining in the second step by using a plasma of a processing gas by supplying the first and second high frequency powers to the lower and upper electrode. Further, the first, second and third steps are repeated multiple times.

The plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a dielectric plate, and a waveguide. The stage is provided in the processing container. The dielectric plate is provided above the stage with a space in the processing container interposed therebetween. The upper electrode is provided above the dielectric plate. The waveguide has an end and guides high frequency waves in a VHF band or a UHF band. The end is arranged to face the space to radiate high frequency waves to the space. The dielectric plate includes a conductive film. The conductive film is provided on an upper surface of the dielectric plate. The upper surface faces the upper electrode. The conductive film is electrically connected to the upper electrode.

A plasma processing apparatus includes a cylindrical electrode which has a lower end provided with an opening, an upper end that is a closed end, in which a process gas is introduced, and which obtains a plasma process gas upon application of the voltage, and a chamber that is a vacuum container provided with an opening. The cylindrical electrode, which has the upper end attached to the opening of the chamber via an insulation material, is extended in the chamber. The plasma processing apparatus also includes a rotation table carrying a workpiece to be processed by the process gas to a space below the opening of the cylindrical electrode, a shield covering the cylindrical electrode extended inside the chamber via a gap, and a spacer installed in the gap, and formed of an insulation material.

An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M.sub.xO.sub.yF.sub.z, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.

A plasma processing apparatus includes a processing vessel; a placing table, serving as a lower electrode, disposed within the processing vessel; an upper electrode serving as a facing electrode of the placing table; a plasma processor configured to form a gas within the processing vessel into plasma by supplying a high frequency power and to process a processing target object on the placing table with the plasma; a cover member configured to cover the upper electrode from thereabove; a cooler provided within the cover member and configured to cool the upper electrode with a coolant having a temperature lower than a dew point temperature of exterior air outside the processing vessel; and a gas supply configured to supply a low-dew point gas having a dew point temperature lower than the dew point temperature of the exterior air into a space surrounded by the cover member and the upper electrode.

A cleaning, sanitizing or disinfecting scrubbing device includes a body, a non-thermal plasma generator and damp wipe. Generated plasma activates fluid in the wipe. The device may include spacer posts between the body and wipe and a conductive mesh between the body and wipe or embedded in the wipe. Another embodiment includes a reservoir for holding a water-based fluid, a fluid delivery element connected to the reservoir by a tube through which the fluid can flow and a non-thermal plasma generator. The non-thermal plasma generator activates the fluid. In one embodiment the scrubbing device is a mitt. In another embodiment the scrubbing device is a glove.

A deposition apparatus includes a shield member having a lattice shape in a plan view, the lattice shape including short side edges extending along a first direction and long side edges extending along a second direction, the short side edges including first and second short side edges, a bracket member including a first bracket member coupled to the first short side edge, and a second bracket member coupled to the second short side edge, a plurality of anode bars extending along the second direction and stably placed on each of the first bracket member and the second bracket member, and a target member covering the plurality of anode bars. An anode bar of the plurality of anode bars protrudes outward beyond at least one of the first bracket member and the second bracket member, and the anode bar is physically separated from the shield member by the bracket member.

The invention relates to the proposal of an electrode arrangement in a device for carrying out processes of physical vapor deposition that greatly reduces or even prevents the degradation of the electrode material caused by accretions. The contamination of the anode occurring in these processes due to cathodic carbon is minimized or prevented by the application of a thin adhesion-reducing coating of high electrical conductivity to the anode, which coating has poorer adhesive properties with regard to the coating material than the uncoated anode material. This coating is preferably a nitride coating, particularly preferably of TiN, applied with a coating thickness of between 0.1 μm and 3.5 μm.

A gas distribution assembly provided in an apparatus for treating a substrate with plasma to distribute gas includes a gas distribution plate formed with a plurality of gas introduction holes for diffusing gas supplied from the gas supply unit; a shower head plate disposed at the upper portion or lower portion of the gas distribution plate to be in contact with the gas distribution plate and having a plurality of gas supply holes formed at positions communicating with the gas introduction holes to penetrate through the upper surface and the lower surface; and a fastening member provided at a side surface in contact with the gas distribution plate and the shower head plate and including a first coupling portion coupled to the gas distribution plate and a second coupling portion supporting the lower surface of the shower head plate to contact the gas distribution plate and the shower head plate.