Cylindrical evaporation source which includes, at an outer cylinder wall, target material to be evaporated as well as a first magnetic field source and a second magnetic field source which form at least a part of a magnet system and are arranged in an interior of the cylindrical evaporation source for generating a magnetic field. In this respect, first magnetic field source and second magnetic field source are provided at a carrier system such that a shape and/or a strength of the magnetic field can be set in a predefinable spatial region in accordance with a predefinable scheme. In embodiments, the carrier system is configured for setting the shape and/or strength of the magnetic field of the carrier system such that the first magnetic field source is arranged at a first carrier arm and is pivotable by a predefinable pivot angle (.sub.1) with respect to a first pivot axis.

In one aspect, coated cutting tools are described herein comprising a substrate and a coating comprising a refractory layer deposited by physical vapor deposition adhered to the substrate, the refractory layer comprising M.sub.1xAl.sub.xN wherein x0.68 and M is titanium, chromium or zirconium, the refractory layer including a cubic crystalline phase and having hardness of at least 25 GPa.

A process for producing a coating source for physical vapour deposition provides the coating source with a target layer formed of an at least two-phase composite which contains a metallic phase and at least one further phase and a mechanical stabilizing layer which is joined to the target layer on one side of the target layer. A first powder mixture which corresponds in terms of its composition to the at least two-phase composite and a second powder mixture which corresponds in terms of its composition to the mechanical stabilizing layer are densified hot in superposed layers. A coating source for physical vapour deposition is also provided.

A coating source for physical vapor deposition to produce doped carbon layers. The coating source is produced by way of sintering from pulverulent components and is formed of carbon as matrix material in a proportion of at least 75 mol % and at least one dopant in a proportion in the range from 1 mol % to 25 mol %.

A plasma processing apparatus includes a processing chamber configured to process a substrate, a plasma generator configured to generate a plasma, a transport unit configured to transport, to the processing chamber, the plasma generated by the plasma generator, and a scanning magnetic field generator configured to generate a magnetic field which deflects the plasma so as to scan the substrate by the plasma. The scanning magnetic field generator is configured to be capable of adjusting a center of a locus of the plasma.

A deposition apparatus, which forms a film on a substrate, includes a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

The invention relates to an arrangement for coating substrate surfaces by means of electric arc discharge in a vacuum chamber, wherein electric arc discharges between a target (1) which is electrically connected as a cathode and is formed from a metal material are used. Arranged at a distance from the target (1) is an anode (2), with which the electric arc discharges are ignited to form a plasma formed with metal material of the target (1). The target (1) is connected to a first electric power source (3) and the anode (2) to a second electric power source (4), wherein the absolute values of the electric voltages connected to the target (1) and to the anode (2) different from one another.

A method for depositing a coating of a source material onto a panel is disclosed. The method includes providing a cathodic arc, the cathodic arc including a target surface, the target surface disposed along a target deposition axis and able to emit the source material as a generally cloud of source material vapor and a generally conical stream of liquid particles of the source material. The method further includes positioning the panel relative to the target surface based on a deposition angle, the deposition angle being between the target surface and an outer limit of the generally conical stream of liquid particles o the source material. The method may further include emitting the source material from the target surface as the generally conical cloud of source material vapor and coating the edge with the cloud of source material vapor to provide an edge coating.

This invention provides a deposition apparatus which forms a film on a substrate, comprising: a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

A reactor includes a plasma duct; a gas inlet, at a distal end of the plasma duct, for receiving a gas; a gas outlet at a proximal end of the plasma duct for removing a portion of the gas to generate a gas flow through the plasma duct; a separating baffle positioned between the plasma duct and the gas outlet for restricting gas flow to maintain high pressure in the plasma duct; a shielded cathodic arc source positioned in a cathode chamber at the proximal end; a remote anode, positioned in the plasma duct, for holding a substrate and cooperating with the cathodic arc source to generate an electron flow opposite the gas flow, to initiate a plasma discharge perpendicular to the remote anode at least in vicinity of the remote anode and deposit ions of the plasma discharge on the substrate to form a diamond coating.