The inventive concept provides a substrate treating method. The substrate treating method includes treating a substrate by transferring a process plasma to a treating space of a chamber; and cleaning an exhaust space by supplying a cleaning medium to the exhaust space of the chamber which is positioned below the treating space.

An apparatus and a method for manufacturing a display device are provided. The apparatus includes a plasma generator disposed outside a chamber, an adapter of the chamber, the adapter connecting the plasma generator to the chamber, a cooler connected to the adapter, an insulator connected to the cooler, and a diffuser connected to the insulator. A plasma generated by the plasma generator is supplied into the chamber through a flow path passing through the adapter, the cooler, the insulator, and the diffuser.

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.

Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

An ion source baffle includes a baffle body, wherein the baffle body is of a hollow structure; baffles are symmetrically fixedly arranged on an inner wall of the baffle body; the baffles extend towards the center of the baffle body; and in the direction from the inner wall of the baffle body towards the center of the baffle body, a shielding area formed by the baffles is reduced. The ion etching machine includes a discharge chamber, a reaction chamber and an ion source baffle, wherein the ion source baffle is clamped on an inner wall of the discharge chamber; and plasma sequentially passes through the ion source baffle and an ion source grid assembly. In the ion etching machine, the ion source baffle is additionally provided, such that after plasma is shielded by the ion source baffle.

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.

A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the baffle housing, the baffle assembly comprising a set of baffle plates, the baffle plates spaced along a support rod from a first baffle plate to a last baffle plate, the baffle plates alternately disposed above and below the support rod and alternately disposed in an upper region and a lower region of the baffle housing.

A plasma battle includes a lower ring and an upper ring that extends upwardly from an edge of the lower ring. The lower ring includes a lower central hole on a center of the lower ring and vertically penetrating the lower ring and a lower slit outside the lower central hole and vertically penetrating the lower ring. The upper ring includes an upper central hole on a center of the upper ring and vertically penetrating the upper ring and an upper slit that penetrates the upper ring so as to connect an inner lateral surface of the upper ring to an outer lateral surface of the upper ring.

A method of processing a substrate including loading the substrate into a plasma-processing apparatus. The plasma-processing apparatus includes a focus ring. The substrate is processed in the plasma-processing apparatus using plasma. The substrate is unloaded from the plasma-processing apparatus. A layer is formed on the focus ring. The layer is formed by an in-situ process in the plasma-processing apparatus.

A baffle plate assembly including a baffle plate, a ring and support members. The baffle plate has an outer diameter and configured to distribute gases through a showerhead of a showerhead assembly of a substrate processing system. The gases are received from a stem of the showerhead assembly. The ring has an inner diameter and configured to be disposed in a ring channel of the showerhead assembly. The inner diameter is greater than the outer diameter of the baffle plate. The support members extend from the baffle plate to the ring. The ring and the support members hold the baffle plate in a position between a top plate and a bottom plate of the showerhead.