An apparatus for treating a substrate includes a process chamber with a treatment space, a substrate support unit that supports the substrate, a gas supply unit that supplies a gas into the treatment space, and a plasma source that excites the gas into plasma, the process chamber includes a discharge chamber that is provided over the substrate support unit and has a space in which the gas is excited into the plasma, and the plasma source includes an antenna including a first coil and a second coil that surround a side surface of the discharge chamber along a circumference of the discharge chamber, and a power supply that applies electric power to the antenna, wherein the first coil and the second coil are alternately arranged along a vertical direction, and when viewed from the top, currents flow through the first coil and the second coil in the same direction.

A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

Provided is a reaction chamber for a chemical vapor apparatus. The reaction chamber for a chemical vapor apparatus according to the exemplary embodiment of the present invention includes: a housing having an internal space; a susceptor disposed in the internal space and provided so that a substrate is loaded on an upper surface thereof; a showerhead disposed in the internal space to be placed above the susceptor and provided to spray a process gas toward the substrate side; an inner barrel formed in a hollow shape having an open top, an open bottom, and a predetermined height, and being disposed in the internal space so that an upper edge thereof is positioned at a periphery of the showerhead to enclose the substrate and the susceptor; and a driving part connected to the inner barrel via a power transmission part as a medium, wherein, in case of replacing the susceptor and the substrate, a state of the inner barrel is changed into an open state in which the substrate and the susceptor disposed in the inner barrel are exposed to the outside of the inner barrel by an operation of the driving part.

Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed.

Provided are an apparatus and a method for treating substrates. The apparatus includes a process chamber, a support plate to support a substrate inside the process chamber, a gas supply unit to supply a gas into the process chamber, a first plasma generation unit provided to generate plasma inside the process chamber, and a second plasma generation unit provided to generate plasma outside the process chamber. An etching process, an ashing process, an edge cleaning process, and a back-surface cleaning process are sequentially performed on the substrate inside the process chamber.

In a processing device including a reaction container that receives a gas flowing into the reaction container and performs a predetermined process in a treatment chamber, a member that communicates with an exhaust port at a portion in which a diffusion path of a sidewall or a bottom wall of the reaction container is formed, and an opening that is present between the member having the diffusion path and the reaction container to cause the diffusion path and a space of the treatment chamber to communicate, in order to avoid a shift of the gas in the treatment chamber, an opening area of the opening is made narrower as a position of the opening area is closer to the exhaust port.

An apparatus for generating energetic particles and application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting and focusing system communicating with a primary cathodic arc plasma source in a cathode chamber and a distal anode in a coating chamber. A coating chamber comprises a substrate holder off of an optical axis of the plasma source. A set of baffles are installed along the walls of cathode chambers and the plasma duct not occupied with plasma sources and in some embodiments across the plasma stream to trap macroparticles and neutrals. A plasma duct has a deflecting portion with attached cathode chamber and a tunnel portion attached to the coating chamber. The deflecting system comprises a deflecting coil surrounding the cathode chamber having an off-set deflecting conductor spaced from the plasma duct. In one embodiment a magnetron source is magnetically coupled with cathodic arc source.

A method and a substrate processing apparatus including a vertical flow reaction chamber, a flow guiding part and a substrate support at a horizontally central area of the reaction chamber, the substrate support residing underneath the flow guiding part, and the flow guiding part forcing the vertical flow from above the flow guiding part to go round the flow guiding part on its downward way towards the substrate support.

According to one embodiment, a film formation apparatus includes a chamber having an interior to be vacuumed, a carrying unit which is provided in the chamber, and which carries a workpiece that has a processing target surface in a solid shape along a circular carrying path, a film formation unit that causes a film formation material to be deposited by sputtering on the workpiece that is being carried by the carrying unit to form a film thereon, and a shielding member which has an opening located at a side where the workpiece passes through, and which forms a film formation chamber where the film formation by the film formation unit is performed. A compensation plate that protrudes in the film formation chamber is provided, and the compensation plate has a solid shape along a shape of the processing target surface of the workpiece, and is provided at a position facing the workpiece.

Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate in an etch process chamber includes: pulsing RF power from an RF bias power supply to a lower electrode disposed in a substrate support of the etch process chamber at a first frequency of about 200 kHz to about 700 kHz over a first period to create a plasma in a process volume of the etch process chamber, wherein a conductance liner surrounds the process volume to provide a ground path for an upper electrode of the etch process chamber; and pulsing RF power from the RF bias power supply to the lower electrode at a second frequency of about 2 MHz to about 13.56 MHz over the first period.