An arc deposition system includes a coating chamber and a central cathode target disposed within the coating chamber. At least two anodes surround the central cathode target. Each anode is positively biased with respect to the central cathode target such that each anode independently induces an associated racetrack erosion profile on the central cathode target. At least two magnetic components are located within the central cathode target. The magnetic components guide an associated arc that forms its associated racetrack erosion profile. Characteristically, each anode of the at least two anodes has an associated magnetic component.

Provided is a plasma treatment apparatus capable of uniform substrate treatment by correction of unevenness in a plasma density distribution. The apparatus has a configuration such that a substrate is treated with plasma, and an evacuated container is provided with an annular antenna arranged around an outer periphery of the container, and is formed of a power supply container, and a process container where the substrate is placed, which communicates with an internal space of the power supply container. The plasma is generated in the power supply container by radio-frequency power supplied to the antenna. The plasma is diffused into the process container by a magnetic field of solenoid coils arranged around an outer periphery of the antenna. The inclination of the magnetic field is adjusted by an inclination adjustment means for adjusting the inclination of the solenoid coils with respect to the process substrate.

The present invention relates to an arc vaporization source for generating hard surface coatings on tools. The invention comprises an arc-vaporization source, comprising at least one electric solenoid and a permanent magnet arrangement that is displaceable relative to the target surface. The vaporization source can be adjusted to the different requirements of oxide, nitride, or metal coatings. The rate drop during the lifespan of a target to be vaporized can be held constant or adjusted by suitably adjusting the distance of the permanent magnets to the front side of the target. A compromise between the coating roughness and rate can be set.

Systems and methods for improving doping and/or deposition uniformity using a tunable electromagnetic field generation device are provided. In an exemplary embodiment, the system includes a chamber configured to contain a semiconductor wafer, a plasma generator, and a gas inlet, and an exhaust gas outlet. The gas inlet permits a controlled flow of a gas into the chamber through a wall of the chamber and the exhaust gas outlet permits exhausting of gas from the chamber. The system further includes a wafer support structure configured to support the semiconductor wafer during a doping or deposition process and an electromagnetic structure positioned within the chamber and at least partially surrounding an upper surface of the wafer support structure.

The invention relates to a plasma source (1) for depositing a coating onto a substrate (9), which is connectable to a power source (P) and includes: an electrode (2); a magnetic assembly (4) located circumferentially relative to said electrode and including a set of magnets mutually connected by a magnetic bracket (46) including a first and second central magnet (43, 44) and at least one head magnet (45); and an electrically insulating enclosure (5) arranged such as to surround the electrode and the magnets.

A plasma processing apparatus including a vacuum chamber comprising a conduit, a process chamber, and a first gas input port for introducing gas into the vacuum chamber, and a pump port for evacuating gas from the vacuum chamber. A magnetic core surrounds the conduit. An output of an RF power supply is electrically connected to the magnetic core. The RF power supply energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the vacuum chamber. A platen that supports a workpiece during plasma processing is positioned in the process chamber.

A cathodic arc coating apparatus includes a vessel, a cathode disposed in the vessel, and a stinger assembly. The stinger assembly includes a first magnetic field generator disposed in a first stinger cup in selective contact with the cathode. The first stinger cup has at least a first electrically conductive cup portion spaced from a second electrically conductive cup portion by a thermally insulating layer therebetween.

A plasma CVD apparatus includes a plasma source connected to an alternating current power supply or two or more alternating current power supplies, configured to generate plasma; and a magnet array configured by a plurality of magnets. The plasma source has an electrode group, which is configured by arranging n electrodes (n being a positive even integer), in an order of electrode numbers. Each of the electrodes of the electrode group is connected to the alternating current power supply. An exit of a flow channel for a precursor gas is formed between adjacent electrodes of the electrode group. The magnet array is arranged so that a north pole or a south pole of each of the magnets is facing the plasma source. In the magnet array, for at least one pair of adjacent two magnets, poles facing the plasma source are arranged to be the same.

Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.

In order to improve the etching depth and/or the etching homogeneity at a substrate, a plasma source with one or more single electrodes or one or more magnets is proposed. The magnet generates a magnetic field in the vicinity of the electrodes, which may be rear-side or front-side.