A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a controller. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The controller controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.

A target value of magnetic flux density and magnetic flux density actually obtained are made to coincide precisely with each other. An electromagnet control device comprises a current value determining unit for determining, based on a magnetic flux density instruction value, a value of current that is made to flow through a coil. The current value determining unit is constructed to execute a second process for determining, based on a second function, a value of the current, if the magnetic flux density is to be decreased from that in a first magnetization state, and a fourth process for expanding or reducing the second function by use of a first scaling ratio for transforming it to a fourth function, and determining, based on the fourth function obtained after above transformation, a value of the current, if the magnetic flux density is to be decreased from that in a third magnetization state.

Methods, systems, apparatuses, and computer programs are presented for controlling etch rate and plasma uniformity using magnetic fields. A substrate processing apparatus includes a vacuum chamber including a processing zone for processing a substrate. The apparatus further includes a magnetic field sensor configured to detect a signal representing a residual magnetic field associated with the vacuum chamber. At least one magnetic field source is configured to generate one or more supplemental magnetic fields through the processing zone of the vacuum chamber. A magnetic field controller is coupled to the magnetic field sensor and the at least one magnetic field source. The magnetic field controller is configured to adjust at least one characteristic of the one or more supplemental magnetic fields, causing the one or more supplemental magnetic fields to reduce the residual magnetic field to a pre-determined value.

A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.

Provided are a cooling block that can be easily manufactured by forming vertical or horizontal flow paths in an integrated single block body through drilling, and a plasma reaction device having same, and may include: an integrated block body; a first vertical flow path formed in a vertical shape by passing through the inside of the block body from one surface of the block body; a first horizontal flow path passing through one portion of the first vertical flow path; a second horizontal flow path passing through the other portion of the first vertical flow path; a second vertical flow path passing through the first horizontal flow path and the second horizontal flow path; a first sealing stopper provided at a first point so that a refrigerant, having passed through the first vertical flow path, can branch in two ways and then merge into the second vertical flow path; and a second sealing stopper provided at a second point.

Provided are a plasma reaction device capable of cooling a reactor body and a magnetic core by circulating cooling water, and a cooling method thereof, the plasma reaction device including an annular loop space therein, and a body cooling channel therein, a magnetic core having a primary coil to generate plasma by exciting a gas in the annular loop space, a cooling block being in thermal contact with the reactor body or the magnetic core, and having a block cooling channel therein, a connecting block having a first water inlet pipe and a first water outlet pipe at a side thereof to supply cooling water at a first temperature, and having a second water inlet pipe and a second water outlet pipe at another side thereof to collect the cooling water at a second temperature higher than the first temperature, and a cooling water circulation line mounted between the connecting block, the cooling block, and the reactor body.

In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.

A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

A method of producing hydrogen ions includes generating a diode-type HF plasma PL. This allows to set or adjust the energy of ions output by the plasma source in an improved manner.