Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

Within a vacuum recipient plasma enhanced atomic layer deposition (PEALD) is performed in that precursor gas is inlet from a precursor gas inlet and a monomolecular layer is deposited on a substrate by adsorption. Subsequently a reactive gas is inlet through a reactive gas inlet and the monomolecular layer on the substrate is reacted, enhanced by UHF plasma which is generated to be distributed along a geometric locus which surrounds a substrate carrier and thus the substrate on this carrier.

Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV.

The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.

Techniques are disclosed for an electron cyclotron rotation (ECR)-enhanced hollow cathode plasma source (HCPS). A cylindrical magnet is placed around the neck of a hollow cathode under the influence of an RF field. A plasma gas is introduced in the hollow cathode that undergoes phase transition to a plasma containing free electrons and gas ions. The magnetic field of the magnet causes ECR that confines free electrons to a narrow spiraling beam traveling down the body of the hollow cathode. Unlike traditional methods, the present ECR-enhanced design confines the electrons and ions to a narrow path away from the walls of the cathode. The high-density, stable plasma is available at the distal end of the hollow cathode. A multicavity design utilizes multiple cavities with multiple aligned magnets in a single reactor suitable for various processes including, PECVD, PEALD, ALE, etc.

A method of manufacturing a semiconductor device includes: preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order on a semiconductor substrate in a first direction, the stacked body including a first region and a second region different from the first region; etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam, and etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region.

A plasma film forming apparatus 1 includes: a vacuum chamber 2 in which a film forming process is performed to a substrate 4; a substrate holder 3 provided so as to be rotatable along a film forming surface 4a of the substrate 4; a rotating shaft 5 connected to the substrate holder 3; and a plasma generation unit 10 configured to generate a plasma 6 and provided such that an irradiation angle of the plasma 6 with respect to the rotating shaft 5 forms an acute angle. The apparatus further includes: a first driving unit 7 configured to move the substrate holder 3 in a vertical direction 11 parallel to the rotating shaft 5; a second driving unit 8 configured to move the substrate holder 3 in a horizontal direction 12 orthogonal to the rotating shaft 5; and a third driving unit 9 configured to rotate the rotating shaft 5, and the substrate holder 3 is moved independently in the vertical direction 11 and the horizontal direction 12.

Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

A device for producing an amorphous carbon layer by electron cyclotron resonance plasma, the device including a plasma chamber; a gas supply; a magnetic mirror; a waveguide extending along a reference axis; a system for injecting microwave power; a magnetic field generator for generating a magnetic field in the plasma chamber, the magnetic field generator being configured to create a beam of magnetic field lines along which plasma is diffused; a target made from carbon; a substrate holder, wherein the target is arranged at a distance from the reference axis of between R.sub.target/2 and R.sub.target, and wherein the device further includes a screen arranged between the waveguide and the substrate holder.

According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.

A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.