An ECR (Electron Cyclotron Resonance) ion source includes a plasma chamber having a circular cylindrical cross-section, magnets for generating a magnetic field for confinement of the plasma in the plasma chamber, and a microwave generator disposed outside the plasma chamber and generating at least two microwave signals. Several antennas protrude radially into the plasma chamber with a predetermined angular offset α. The antennas receive phase-shifted microwave signals from the microwave generator and radiate linearly polarized microwaves, which in turn produce a circularly polarized microwave inside the plasma chamber. A method for operating an ECR ion source is also described.

Techniques are disclosed for an electron cyclotron rotation (ECR)-enhanced hollow cathode plasma source (HCPS). A cylindrical magnet is placed around the neck of a hollow cathode under the influence of an RF field. A plasma gas is introduced in the hollow cathode that undergoes phase transition to a plasma containing free electrons and gas ions. The magnetic field of the magnet causes ECR that confines free electrons to a narrow spiraling beam traveling down the body of the hollow cathode. Unlike traditional methods, the present ECR-enhanced design confines the electrons and ions to a narrow path away from the walls of the cathode. The high-density, stable plasma is available at the distal end of the hollow cathode. A multicavity design utilizes multiple cavities with multiple aligned magnets in a single reactor suitable for various processes including, PECVD, PEALD, ALE, etc.

Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system.

A charge neutralizer that includes a vacuum chamber which is capable of having a charged object installed therein and includes a high vacuum processing unit that performs vapor deposition, and a plasma generator configured to supply plasma caused by an electron cyclotron resonance to an inside of the vacuum chamber. The plasma generator includes a plasma source configured to generate the plasma, and a flange configured to install the plasma source inside the vacuum chamber.

An electron cyclotron resonance (ECR) thruster includes a magnetic field source configured to generate a magnetic field, a thruster body that defines a chamber, the thruster body being disposed relative to the magnetic field source such that the magnetic field is present in the chamber and such that a magnetic nozzle is established, an antenna configured to propagate radio frequency (RF) power within the chamber, and a waveform generator coupled to the antenna to generate an RF waveform for the RF power. The waveform generator is configured such that the RF waveform includes multiple frequencies.

The present invention provides a plasma processing apparatus and a plasma processing method which improve the uniformity and accordingly the yield in an etching treatment of a sample. In the plasma processing apparatus or the plasma processing method for treating a wafer placed on an upper surface of a sample table disposed in a treatment chamber in a vacuum container by using plasma generated in the treatment chamber, inductance of the coil is adjusted according to magnitude of an phase difference of the high frequency power flowing through the power supply path such that the voltage of the high frequency power becomes a maximum value or a minimum value, in which the coil is in a connection path that electrically connects, via the coil, positions between each electrode and each matching box on a plurality of power supply paths that electrically connect a plurality of electrodes and a plurality of electrodes high frequency power sources which supply high frequency power to the plurality of electrodes disposed at a center part and an area on an outer peripheral side of the center part in the sample table.

An ion beam treatment or implantation system includes an ion source emitting ion beams. The ion source includes a microwave source and a curved waveguide conduit having openings therein. The waveguide conduit is coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings. The ion source also includes a curved plasma chamber in communication with the waveguide conduit through the openings. The plasma chamber receives through the openings microwaves from the waveguide conduit. The plasma chamber includes magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which the ion beams are extracted.

An ECR (Electron Cyclotron Resonance) ion source includes a plasma chamber having a circular cylindrical cross-section, magnets for generating a magnetic field for confinement of the plasma in the plasma chamber, and a microwave generator disposed outside the plasma chamber and generating at least two microwave signals. Several antennas protrude radially into the plasma chamber with a predetermined angular offset . The antennas receive phase-shifted microwave signals from the microwave generator and radiate linearly polarized microwaves, which in turn produce a circularly polarized microwave inside the plasma chamber. A method for operating an ECR ion source is also described.

A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.