According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.

A charge neutralizer that includes a vacuum chamber which is capable of having a charged object installed therein and includes a high vacuum processing unit that performs vapor deposition, and a plasma generator configured to supply plasma caused by an electron cyclotron resonance to an inside of the vacuum chamber. The plasma generator includes a plasma source configured to generate the plasma, and a flange configured to install the plasma source inside the vacuum chamber.

According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.

Provided is a method of manufacturing a semiconductor device with which a trench shape having vertical, flat, and smooth side wall surfaces can be formed even at room temperature. A semiconductor substrate is placed on a sample stage which is kept at room temperature in a reaction container. A trench is formed in the semiconductor substrate by plasma etching that uses etching gas including oxygen and sulfur hexafluoride, while controlling the gas ratio of oxygen to sulfur hexafluoride so that the gas ratio is from 70% to 100%.

A method for single or multiply charged ion implantation into a surface of a treated object, and a device for implementing the implantation method, the method including: directing towards the surface of the treated object an ion beam produced by an ion source of the electronic cyclotron resonance type; producing at least one primary electron beam and directing the primary electron beam so that it passes through the ion beam; and producing a secondary electron beam by reflecting the primary electron beam onto a target once the primary electron beam has traversed the ion beam, the target being oriented such that the secondary electron beam falls onto the surface of the treated object.

An ion beam treatment or implantation system includes an ion source emitting ion beams. The ion source includes a microwave source and a curved waveguide conduit having openings therein. The waveguide conduit is coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings. The ion source also includes a curved plasma chamber in communication with the waveguide conduit through the openings. The plasma chamber receives through the openings microwaves from the waveguide conduit. The plasma chamber includes magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which the ion beams are extracted.

Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system.

The present invention provides a plasma processing apparatus and a plasma processing method which improve the uniformity and accordingly the yield in an etching treatment of a sample. In the plasma processing apparatus or the plasma processing method for treating a wafer placed on an upper surface of a sample table disposed in a treatment chamber in a vacuum container by using plasma generated in the treatment chamber, inductance of the coil is adjusted according to magnitude of an phase difference of the high frequency power flowing through the power supply path such that the voltage of the high frequency power becomes a maximum value or a minimum value, in which the coil is in a connection path that electrically connects, via the coil, positions between each electrode and each matching box on a plurality of power supply paths that electrically connect a plurality of electrodes and a plurality of electrodes high frequency power sources which supply high frequency power to the plurality of electrodes disposed at a center part and an area on an outer peripheral side of the center part in the sample table.

A method for single or multiply charged ion implantation into a surface of a treated object, and a device for implementing the implantation method, the method including: directing towards the surface of the treated object an ion beam produced by an ion source of the electronic cyclotron resonance type; producing at least one primary electron beam and directing the primary electron beam so that it passes through the ion beam; and producing a secondary electron beam by reflecting the primary electron beam onto a target once the primary electron beam has traversed the ion beam, the target being oriented such that the secondary electron beam falls onto the surface of the treated object.

In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.