A method for treating a flexible plastic substrate is provided herein. The method includes establishing an atmospheric pressure plasma beam from an inert gas using a power of greater than about 90W, directing the plasma beam toward a surface of the flexible polymer substrate, and scanning the plasma beam across the surface of the polymer substrate to form a treated substrate surface.

According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.

A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.

A single plasma nozzle of a plasma treatment station is used to treat the card surface prior to performing drop-on-demand printing on the card surface. The single plasma nozzle has a plasma discharge width that is less than the width of the card. The card and the plasma nozzle are moved relative to one another using a two direction control scheme during plasma treatment in order to be able to plasma treat a desired area of the card surface. The card and the plasma nozzle may also be moveable toward or away from one another to change the distance therebetween.

An apparatus for depositing a polymer layer containing nanomaterial on a substrate material includes a carrier for carrying the substrate material; a transport structure for providing a polymerization material near a surface of the substrate material and conducting a gas flow near the surface of the substrate material with the gas flow comprising a nanomaterial; and a plasma chamber wherein a plasma electrode structure is arranged for depositing the polymer layer containing nanomaterial on the surface of the substrate material by applying a plasma polymerization process.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

A device fir treating a product with microwaves has a treatment chamber in which the product can be conveyed along a transport track in a transport direction through the treatment chamber, and has a microwave-emitting apparatus, which is arranged in the treatment chamber and by which microwaves coupled into the microwave-emitting apparatus can be emitted, which microwaves impinge upon the product. The microwave-emitting apparatus has at least one coaxial conductor, which protrudes into or is arranged in the treatment chamber and which has an electrically conductive inner conductor and an electrically conductive outer conductor, the outer conductor surrounding the inner conductor at a distance therefrom and in coaxial arrangement and having at least one opening, which enables the emission of microwaves through the opening from the coaxial conductor onto the product. The microwave-emitting apparatus has a plurality of coaxial conductors arranged at a distance from each other in the transport direction, each having at least one opening in the outer conductor. In a coaxial conductor arranged subsequently in the transport direction, the at least one opening is offset transversely to the transport direction with respect to the at least one opening of a preceding coaxial conductor.

Apparatus comprising: a support arranged to transport a moving substrate; a plasma generator arranged to generate plasma; and an electrode arranged to bias ions within the plasma towards the moving substrate to form an ion flux. The ion flux has an energy level between 3.6 eV and 250 eV. Alternatively, apparatus for defining plasma having a plurality of spaced race track portions.

The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.