Disclosed is a window device for diagnosis of plasma OES (Optical Emission Spectroscopy). The window device includes a housing including a first chamber and a second chamber horizontally adjacent to each other; a connection opening defined in one face of the housing and between the first chamber and the second chamber, wherein the connection opening faces toward an opening through which light of plasma from a plasma chamber is exposed to the connection opening; an observation window opening defined in an opposite face of the housing opposite to the connection opening, wherein the observation window opening is coaxial with the connection opening, wherein the light of the plasma transmits through the observation window opening, and is incident to a light receiver of an OES sensor; an observation window positioned inside the observation window opening and in the housing; a winder and a rewinder installed in the first chamber and the second chamber, respectively; and a transparent film moving, in a roll-to-roll manner, from the rewinder to the winder while covering an inner face of the connection opening in the housing.

A plasma processing apparatus includes a processing chamber, a support in the processing chamber to support an edge ring assembly that includes a heat transfer sheet that is attached to an edge ring, and the edge ring surrounding the substrate supported by support, and a delivery structure for vertically moving and transferring the edge ring assembly between the plasma processing apparatus and the pressure-reducible transfer apparatus. The transfer apparatus includes a pressure-reducible transfer chamber connected to the processing chamber, and a transferer for transferring the edge ring assembly. Without exposing the processing chamber to the atmosphere, the transferer supports the heat transfer sheet and moves the edge ring assembly to a position above the support, the delivery structure receives the edge ring assembly from the transferer and supports the heat transfer sheet, and the support receives the edge ring assembly to support the edge ring via the heat transfer sheet.

A substrate support for use in a reaction chamber includes a base, and an in-situ electrostatic chuck. The chuck includes a first electrode in an upper portion of the chuck that is configured to hold a wafer to an upper surface of the upper portion by a first electrostatic attractive force under a condition of a first voltage is applied to the first electrode, and a second electrode that opposes an upper surface of the base and is configured to hold the chuck to the base by a second electrostatic attractive force under a condition that a second voltage is applied to the second electrode. Under a condition that the second voltage is not supplied to the second electrode, the second electrostatic attractive force is not present and the chuck is freed to be replaced in-situ without also removing the base and without exposing the reaction chamber to external atmosphere.

A deposition apparatus includes a shield member having a lattice shape in a plan view, the lattice shape including short side edges extending along a first direction and long side edges extending along a second direction, the short side edges including first and second short side edges, a bracket member including a first bracket member coupled to the first short side edge, and a second bracket member coupled to the second short side edge, a plurality of anode bars extending along the second direction and stably placed on each of the first bracket member and the second bracket member, and a target member covering the plurality of anode bars. An anode bar of the plurality of anode bars protrudes outward beyond at least one of the first bracket member and the second bracket member, and the anode bar is physically separated from the shield member by the bracket member.

A processing chamber includes: a lower portion; an upper portion that covers the lower portion; a pedestal that is located within the lower portion, to vertically support a substrate above a top surface of the pedestal to distribute a precursor between the top surface and a first surface of the substrate, the pedestal configured to be electrically connected to one of a ground potential and a radio frequency potential; a grid that is coupled to the upper portion and that is configured to be electrically connected to the other one of the ground potential and the radio frequency potential; a window that covers an opening in the upper portion; and an infrared light source configured to transmit infrared light through the window and the grid to a second surface of the substrate. The second surface of the substrate is opposite the first surface of the substrate.

In an example, a showerhead pedestal assembly for a substrate processing chamber is provided. The showerhead pedestal assembly includes a faceplate. A platen is disposed within the faceplate and includes a heater element extending through at least one groove in the faceplate. The at least one groove is profiled to accept at least one portion of the heater element. A periphery of the platen is joined to an interior surface of the faceplate by a friction stir welded joint.

In a substrate processing apparatus, a processing chamber, in which a target substrate is disposed and substrate processing is performed on the target substrate, is provided. A consumable part is disposed in the processing chamber and consumed by the substrate processing. A supply unit is configured to supply an ionic liquid in response to a consumption of the consumable part. A drive unit is configured to drive the consumable part by using the ionic liquid supplied from the supply unit.

A plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber defining a vertical direction and a lateral direction. The plasma processing apparatus includes a pedestal disposed within the processing chamber. The pedestal is configured to support the substrate. The plasma processing apparatus includes a radio frequency (RF) disposed within the processing chamber. The RF bias electrode defines a RF zone extending between a first end of the RF bias electrode and a second end of the RF bias electrode along the lateral direction. The plasma processing apparatus includes a focus ring disposed within the processing chamber. The plasma processing apparatus further includes a focus ring adjustment assembly. The focus ring adjustment assembly includes a lift pin positioned outside of the RF zone. The lift pin is movable along the vertical direction to adjust a distance between the pedestal and the focus ring along the vertical direction.

Disclosed are a bottom electrode assembly, a plasma processing apparatus, and a method of replacing a focus ring, wherein the bottom electrode assembly comprises: a base for supporting a wafer to be processed; a focus ring provided surrounding the outer periphery of the base; a cover ring disposed beneath the focus ring, a plurality of recesses being arranged along the circumferential direction of the cover ring; moving blocks provided in the recesses, an inner top corner of each moving block being provided with a step, the step being configured to support part of the focus ring; and a drive device connected to the moving blocks to activate the moving blocks to drive the focus ring to move up and down. With the bottom electrode assembly, replacement of the focus ring can be performed without opening the process chamber.

An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner lower radius, and the lower horizontal section further includes a plurality of slots. The confinement ring further includes an upper horizontal section extending between an inner upper radius and the outer radius of the confinement ring and a vertical section that integrally connects the lower horizontal section with the upper horizontal section. The extension section of the lower horizontal section is configured to surround the lower electrode when installed in the plasma processing chamber.