Provided is a substrate processing apparatus including a chamber having a processing space therein, a supporting unit arranged in the processing space, having a substrate located thereon, and including a label material layer including a label material therein, a plasma source configured to generate plasma from a processing gas in the processing space, and a measurement apparatus configured to detect the label material, wherein, when the supporting unit is etched to a depth that is greater than or equal to a first depth, the label material layer is exposed.

A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

Proposed is a substrate processing apparatus capable of replacing consumables and, more particularly, to a technique for supporting replacement of consumables such as a shower head and a focus ring while maintaining a chamber processing environment of the substrate processing apparatus.

A substrate processing system installed on a floor face is provided. The substrate processing system includes a substrate transfer module, a supporting table including a top plate disposed separately from the floor face, a plurality of substrate processing modules disposed on the top plate and coupled to the substrate transfer module along a lateral side of the substrate transfer module, and a plurality of power units disposed below the top plate. Further, the plurality of power units correspond to the plurality of substrate processing modules, respectively, and each of the power units is configured to supply electric power to the corresponding processing module.

A component of a semiconductor processing chamber formed of a metal matrix component having an anodized layer on a surface thereof. The anodized layer comprises an aluminum oxide layer and is formed over an AlSic component. The anodized layer provides the component with protection against corrosion due to plasma processing gases, as the anodized layer provides a protective coating. A layer of aluminum is plated over a surface of the component and the aluminum layer is subsequently anodized to form the protective layer.

Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein; a conductive substrate disposed adjacent to a lower surface of the ceramic substrate, serving also as a plasma generating electrode, and having the same diameter as the ceramic substrate; a support substrate disposed adjacent to a lower surface of the conductive substrate, having a greater diameter than the conductive substrate, and electrically insulated from the conductive substrate; and a mounting flange constituting a part of the support substrate and radially extending out of the conductive substrate.

A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

Provided is a substrate processing apparatus. The substrate processing apparatus includes a support plate configured to support a substrate, a base plate under the support plate, a thermal insulation layer between the support plate and the base plate, a bonder bonding the base plate and the thermal insulation layer to each other, and a sealing member disposed around a side surface of the bonder to prevent damage to the bonder.

An end effector for moving workpieces and replaceable parts within a system for processing workpieces. The end effector may include an arm portion extending between a first arm end and a second arm end along the axial direction. The end effector may further include a spatula portion extending between a first spatula end and a second spatula end, the first spatula end being adjacent the second arm end. Further, the end effector may include a first support member extending outwardly from the spatula portion, a second support member extending outwardly from the spatula portion, and a shared support member extending outwardly from the arm portion. The shared support member and the first support member together to support workpieces of a first diameter, and the shared support member and the second support member together support replaceable parts of a second diameter.