A semiconductor machine system comprises a plurality of working chambers, wherein the working chambers process materials separately; a control host coupled to the plurality of working chambers, comprising: a main control module coupled to the plurality of working chambers; an analog control module coupled to the plurality of working chambers, and the analog control module is detachably coupled to one or more external devices by serial interface coupling; a digital control module coupled to the plurality of working chambers, and the main control module, the analog control module and the digital control module are coupled to each other; and a plurality of operating units coupled to at least one of the main control module, the analog control module and the digital control module, respectively, to control the plurality of working chambers for processing the materials by the main control module, the analog control module and the digital control module.

An apparatus for atomic scale processing is provided. The apparatus may include a reactor and an inductively coupled plasma source. The reactor may have inner and outer surfaces such that a portion of the inner surfaces define an internal volume of the reactor. The internal volume of the reactor may contain a fixture assembly to support a substrate wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

An embodiment provides a deposition apparatus, including: a process chamber; a residual gas analyzer connected to the process chamber; a cleansing gas supplier connected to the process chamber; and a driver that is connected to the residual gas analyzer and the cleansing gas supplier and controls the residual gas analyzer and the cleansing gas supplier.

A temperature changing method includes changing a pressure of a gas supplied from a gas supply to a gap between the substrate and an electrostatic chuck from a first pressure to a second pressure being lower than the first pressure, changing a voltage applied to the electrostatic chuck from a first voltage to a second voltage being lower than the first voltage, changing a temperature of the electrostatic chuck from a first temperature to a second temperature, electrostatically attracting the substrate by the electrostatic chuck for a time in a state where the gas pressure is the second pressure and the voltage is the second voltage, changing the gas pressure from the second pressure to a third pressure being lower than the first pressure and higher than the second pressure, and changing the voltage from the second voltage to a third voltage being higher than the second voltage.

An upper member is disposed at an upper portion within a processing chamber. A ceiling member forms a ceiling of the processing chamber, and is provided with a through hole at a facing surface thereof which faces the upper member. A supporting member supports the upper member with a first end thereof located inside the processing chamber by being inserted through the through hole and slid within the through hole. An accommodation member accommodates therein a second end of the supporting member located outside the processing chamber, and is partitioned into a first space at a first end side and a second space at a second end side in a moving direction with respect to the second end. A pressure controller generates a pressure difference between the first space and the second space. The pressure difference allows the supporting member to be moved.

In one example, a workpiece support structure of a plasma treatment chamber has upper and lower ends, and first and second support members that extend between the upper and lower ends. The support members are electrically isolated from one another and offset from one another along a horizontal direction so as to define a cavity therebetween. The first and second support members support electrodes within the cavity such that (1) the electrodes are offset from one another along the vertical direction, (2) the electrodes extend between the first and second support members along the first horizontal direction, (3) a first set of the electrodes are electrically coupled to the first support member and electrically isolated from the second support member, and (4) a second set of the electrodes, different from the first set, are electrically coupled to the second support member and electrically isolated from the first support member.

A pressure control system is provided. The pressure control system includes a member at least partially positioned within a pumping port fluidly coupled between a multi-head processing chamber and a pump configured to evacuate gases from the multi-head processing chamber. The member is rotatable relative to the pumping port. The pressure control system includes a plurality of pressure sensors. Each of the pressure sensors is configured to obtain data indicative of a pressure of a flow of gas entering the multi-head processing chamber at a corresponding head of the multi-head processing chamber. The pressure control system includes an actuator configured to rotate the member to control a pressure of a flow of gas at a first processing head of the multi-head processing chamber.

There is provided a high dielectric film including amorphous hydrocarbon of which a dielectric constant is 10 or more. A leakage current of the high dielectric film is 1 A/cm.sup.2 or less, and an insulation level is 1 MV/cm or more. Rms surface roughness of the high dielectric film is 20 nm or less.

A film deposition method includes maintaining an inside of a chamber to have a predetermined pressure, cooling a stage, on which the object to be processed mounts, to have an ultralow temperature of −20° C., and mounting the object to be processed on the stage, supplying a gas including a low vapor pressure material gas of a low vapor pressure material into the inside of the chamber, and generating plasma from the supplied gas including the gas of the low vapor pressure material, and causing a precursor generated from the low vapor pressure material by the plasma to be deposited on a recess part of the object to be processed.

Embodiments of the present disclosure generally relate to methods of forming hardmasks. Embodiments described herein enable, e.g., formation of carbon-containing hardmasks having reduced film stress. In an embodiment, a method of processing a substrate is provided. The method includes positioning a substrate in a processing volume of a processing chamber and depositing a diamond-like carbon (DLC) layer on the substrate. After depositing the DLC layer, the film stress is reduced by performing a plasma treatment, wherein the plasma treatment comprises applying a radio frequency (RF) bias power of about 100 W to about 10,000 W.