Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.

A method of growing one or more graphene sheets on one or more regions of an optical fiber using plasma-enhanced chemical vapor deposition (PECVD) includes placing the optical fiber in a growth chamber, placing one or more carbon-containing precursors in the growth chamber, forming a reduced pressure in the growth chamber, and flowing methane gas and hydrogen gas into the growth chamber. The method also includes generating a plasma in the growth chamber, forming a gaseous carbon-containing precursor from the one or more carbon-containing precursors, exposing the one or more regions of the optical fiber to the methane gas, the hydrogen gas, the gaseous carbon-containing precursor, and the plasma, and forming the one or more graphene sheets on the one or more regions of the optical fiber.

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

A processing method of a workpiece in which the workpiece with a plate shape is processed by using a vacuum chamber is provided. In the processing method of a workpiece, a negative pressure is caused to act on a holding surface from a suction path, and suction holding of the workpiece is executed by a chuck table. Then, the gas pressure in the vacuum chamber is reduced to at least 50 Pa and at most 5000 Pa. Then, while the suction holding of the workpiece is executed, an inert gas in a plasma state is supplied to the workpiece, and voltages are applied to electrodes disposed in the chuck table to execute electrostatic adhesion of the workpiece by the chuck table. Then, a processing gas in a plasma state is supplied, and dry etching of the workpiece is executed.

A substrate processing apparatus is provided. The apparatus comprises a chamber; a substrate support which is arranged in the chamber and has at least one first gas supply path; and at least one control valve configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path. The substrate support includes a base, and an electrostatic chuck which is arranged on the base and has an upper surface. The upper surface has a plurality of protrusions and a first annular groove group. The first annular groove group comprises a first inner annular groove, a first intermediate annular groove, and a first outer annular groove. Any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path.

A parallelepipedal low-pressure plasma chamber body of glass is disclosed. The low-pressure plasma chamber may have electrodes at opposing sides of the low-pressure plasma chamber body. Furthermore, the low-pressure plasma chamber may have at opposing sides a door and a rear wall closure. The door and rear wall closure may in each case have at least one media connection in order to achieve a uniform gas flow in the low-pressure plasma chamber. The door may be assembled on the collar of the low-pressure plasma chamber body which extends radially away from the longitudinal axis of the low-pressure plasma chamber body. The low-pressure plasma chamber body is preferably produced using the pressing method or blow-and-blow method, in an analogous manner to industrial glass bottle production.

Embodiments disclosed herein include a processing tool for measuring neutral radical concentrations. In an embodiment, the processing tool comprises a processing chamber, and a neutral radical mass spectrometry (NRMS) analyzer fluidically coupled to the processing chamber. In an embodiment, the NRMS analyzer comprises a first chamber fluidically coupled to the processing chamber, where the first chamber comprises a modulator, and a second chamber fluidically coupled to the first chamber, where the second chamber is a residual gas analyzer or a mass spectrometer. In an embodiment, an unobstructed line of sight passes from the processing chamber to the second chamber.

Embodiments of the present disclosure generally relate to methods for etching materials. In one or more embodiments, the method includes positioning a substrate in a process volume of a process chamber, where the substrate includes a metallic ruthenium layer disposed thereon, and exposing the metallic ruthenium layer to an oxygen plasma to produce a solid ruthenium oxide on the metallic ruthenium layer and a gaseous ruthenium oxide within the process volume. The method also includes exposing the solid ruthenium oxide to a secondary plasma to convert the solid ruthenium oxide to either metallic ruthenium or a ruthenium oxychloride compound. The metallic ruthenium is in a solid state on the metallic ruthenium layer or the ruthenium oxychloride compound is in a gaseous state within the process volume.

The present invention provides a method for cleaning a component for use in an ultra-high vacuum. The method may comprise the steps of placing the component to be cleaned in a vacuum furnace chamber; plasma cleaning the component at a temperature of greater than about 80° C.; and evacuating the chamber to a pressure of less than about 10E-5 mbar. Apparatus for performing such methods and kits comprising said components are also provided.