A pressure control system includes a first sensor, a second sensor, an evacuation valve and a controller. The first sensor is configured to detect a frontside pressure within a processing chamber. The frontside pressure is indicative of a downforce on a substrate isposed on a substrate support within the processing chamber. The second sensor is configured to detect a backside pressure on a ackside of the substrate. The controller is configured to: control the evacuation valve to remove gas from and reduce the frontside pressure of the processing chamber; and during the removal of gas from a reduction in the frontside pressure of the processing chamber and based on the frontside pressure and the backside pressure, regulate an opening of the evacuation valve such that the frontside pressure does not drop below the backside pressure.

A substrate treating apparatus includes a housing, treating space and support unit to support a substrate, dielectric plate, gas supply unit, and plasma source to generate a plasma and including a top edge electrode above the edge region supported by the support unit and bottom edge electrode below the edge region supported by the support unit, which includes a support plate having an inner space and vacuum hole that communicates with the inner space and sucking the substrate on the top surface. A lift pin assembly can transfer the substrate between an outside transfer unit and the support plate. A decompression unit can apply negative pressure to the inner space. The lift pin assembly includes a base plate and through hole penetrating the base plate to provide negative pressure in a region under the base plate to a region over the base plate. Lift pins protrude from the base plate and support a bottom substrate surface. A driver can lift/lower the base plate within the inner space.

A substrate processing system is installable in a small installation area. The substrate processing system includes one or more process modules and a vacuum transfer module. At least one of the one or more process modules and the vacuum transfer module at least partially overlap with each other as viewed from above.

The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N.sub.2 RIE treatment to perform reactive ion etching using N.sub.2 gas on the joint surfaces of the substrates and a step of performing a N.sub.2 radical treatment to irradiate the joint surfaces of the substrates with N.sub.2 radicals after the step of performing the N.sub.2 RIE treatment.

The present disclosure discloses a carrier device, a semiconductor apparatus, and a residual charge detection method. The disclosed carrier device is configured to carry a wafer in a semiconductor apparatus. The carrier device includes an electrostatic carrier plate and at least three positioning members, wherein the electrostatic carrier plate includes a carrying surface configured to carry the wafer; the at least three positioning members are arranged around the carrying surface at intervals along a circumferential direction of the carrying surface, each positioning member is provided with a position limiting segment, and the at least three position limiting segments form a position limiting space above the carrying surface. An opening size of the position limiting space increases along a direction away from the carrying surface. The above-mentioned solution can solve the problem that a position deviation of the wafer is relatively large due to incomplete charge removal of the wafer.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to −35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.

A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high pressure oxidant exposure and a lower pressure oxygen containing plasma exposure. The high pressure oxidant exposure is performed at a pressure of greater than 10 Torr, while the lower pressure oxygen containing plasma exposure is performed at a pressure of less than about 10 Torr. The features are high-aspect ratio trenches or holes within a stack of silicon oxide and silicon nitride layers.

Processing chamber components and methods of manufacture of same are provided herein. In some embodiments, a component part body includes a component part body having a base plane and at least one textured surface region, wherein the at least one textured surface region comprises a plurality of independent surface features having a first side having at least a 45 degree angle with respect to the base plane. In at least some embodiments, the textured surface includes a plurality of independent surface features which are pore free.

The present disclosure relates to a multi-chamber apparatus and a semiconductor process method which includes steps of applying a first chamber and a second chamber with a process gas and a radio frequency, so as to acquire a first time difference between a plot of the first initial RF applying versus time and a plot of gas flow versus time and a second time difference between a plot of the second initial RF applying versus time and the plot of gas flow versus time in advance, then executing calibration through the first time difference and the second time difference. Accordingly, a first radio frequency generating unit, a second radio frequency generating unit and a gas source unit of the multi-chamber apparatus are turned off simultaneously, such that quality of the first substrate deposited in the first chamber and the second substrate deposited in the second chamber are relatively uniform.