Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.

An apparatus includes a lift pinto raise and lower a semiconductor substrate relative to a substrate support assembly in a processing chamber. The lift pin includes a top end having a conical shape tapering downwardly and a bottom end having a cylindrical shape. The apparatus comprises a lift pin holder to hold the bottom end of the lift pin.

Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.

A metal-containing photoresist film may be deposited on a semiconductor substrate using a dry deposition technique. Unintended metal-containing photoresist material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, baking, development, or etch operations. An in situ dry chamber clean may be performed to remove the unintended metal-containing photoresist material by exposure to an etch gas. The dry chamber clean may be performed at elevated temperatures without striking a plasma. In some embodiments, the dry chamber clean may include pumping/purging and conditioning operations.

The inventive concept provides a substrate treating method. The substrate treating method includes treating a substrate by transferring a process plasma to a treating space of a chamber; and cleaning an exhaust space by supplying a cleaning medium to the exhaust space of the chamber which is positioned below the treating space.

An alignment module for housing and cleaning masks. The alignment module comprises a mask stocker, a cleaning chamber, an alignment chamber, an alignment stage a transfer robot. The mask stocker is configured to house a mask cassette configured to store a plurality of masks. The cleaning chamber is configured to clean the plurality of masks by providing one or more cleaning gases into a chamber after a mask is inserted into the cleaning chamber. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer a mask from one or more of the alignment stage and the mask stocker to the cleaning chamber.

The present disclosure provides a thin-film-deposition equipment with double-shaft shielding device, which includes a reaction chamber, a carrier and a double-shaft shielding device. The double-shaft shielding device includes a first-connecting arm, a second-connecting arm, a first-shield member, a second-shield member, a first driver and a second driver. The first driver is connected to the first-shield member via the first-connecting arm, and the second driver is connected to the second-shield member via the second-connecting arm, for respectively driving and swinging the two shield members to move in opposite directions via the two connecting arms. Thereby, during a cleaning process of the thin-film-deposition equipment, the two drivers swing the two shield members toward each other into a shielding state for covering the carrier, such that to effectively prevent removed pollutants from polluting the carrier during.

An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

Disclosed herein are systems, devices, and methods for a magnet system for a sputtering device. The disclosed magnet system may include a housing having a housing interior. The magnet system may also include a magnet holder disposed in the housing interior and supported by the housing in a preferably stationary manner. The magnet system may also include a dehumidifying device adjacent to or disposed in the housing interior for drying the housing interior.