A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).

A substrate processing system installed on a floor face is provided. The substrate processing system includes a substrate transfer module, a supporting table including a top plate disposed separately from the floor face, a plurality of substrate processing modules disposed on the top plate and coupled to the substrate transfer module along a lateral side of the substrate transfer module, and a plurality of power units disposed below the top plate. Further, the plurality of power units correspond to the plurality of substrate processing modules, respectively, and each of the power units is configured to supply electric power to the corresponding processing module.

A substrate processing system includes a vacuum transfer module and a plurality of process modules defining respective processing chambers. The plurality of process modules includes a first row of the process modules arranged on a first side of the vacuum transfer module and a second row of the process modules arranged on a second side of the vacuum transfer module opposite the first side. Each of the plurality of process modules includes a gas box arranged above the process module and configured to selectively supply at least one gas and/or gas mixture into the processing chamber of the process module and a radio frequency (RF) generator configured to generate RF power to create plasma within the processing chamber. The RF generator is arranged above the process module and the gas box and the RF generator are arranged side-by-side above the process module.

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer. The base material includes a first surface, a second surface, and at least one hole. The at least one hole extends through the first and second surfaces. The ceramic layer is located on the first surface. The at least one hole includes an oblique surface and a perpendicular surface. The oblique surface is continuous with the first surface and is oblique to a first direction from the first surface toward the second surface. The perpendicular surface is positioned between the second surface and the oblique surface in the first direction and extends along the first direction. An angle between the first surface and the oblique surface is greater than an angle between the perpendicular surface and the oblique surface.

A method for plasma processing that includes: loading a dummy wafer between a focus ring positioned within a plasma process chamber; depositing a material layer over the focus ring by a plasma deposition process within the plasma process chamber; removing the dummy wafer from the plasma process chamber, and loading a substrate to be processed between the focus ring with the material layer within the plasma process chamber and performing a plasma process on the substrate.

The invention is to provide a semiconductor manufacturing apparatus system and a semiconductor device manufacturing method for reducing particles having an adverse effect in a manufacturing step of a semiconductor device. A semiconductor device manufacturing system, includes: a semiconductor manufacturing apparatus; and a platform connected to the semiconductor manufacturing apparatus via a network and in which a particle reduction processing is executed, in which the particle reduction processing includes: a step of acquiring a particle characteristic value by using a sample processed by the semiconductor manufacturing apparatus; a step of specifying a component of the semiconductor manufacturing apparatus leading to a particle generation based on the acquired particle characteristic value and correlation data by machine learning; a step of defining a cleaning condition for cleaning the semiconductor manufacturing apparatus based on the specified component; and a step of cleaning the semiconductor manufacturing apparatus using the defined cleaning condition, and the correlation data is correlation data between the particle characteristic value acquired in advance and the component.

The present disclosure relates to methods of processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The chemical vapor deposition chamber includes a spindle mechanism that cooperates with one or more carrier ring forks to move the semiconductor substrate from one station to another station. The methods include monitoring one or more spindle operation parameters and carrying out one or more maintenance steps on the spindle mechanism based on the results of monitoring the one or more spindle operation parameters. The monitored spindle operation parameters provide an indication of undesirable vibration of the semiconductor substrates in the processing chamber. The vibration of the semiconductor substrates in the processing chamber is undesirable because it promotes generation of unwanted particles that deposit onto a surface of the semiconductor substrate.

A slide and pivot assembly for a process module bias assembly of a substrate processing system includes a slide torsion plate, one or more rails and bearings, a bias mounting plate, and a hinge assembly. The one or more rails and bearings are attached to the slide torsion plate or a processing chamber. The bias mounting plate is configured to hold a portion of a process module for processing a substrate. The hinge assembly is attached to the slide torsion plate and the bias mounting plate. The slide torsion plate, the bias mounting plate and the hinge assembly are configured to slide via the one or more rails and bearings in a lateral direction relative to the processing chamber. The bias mounting plate is configured to pivot relative to the slide torsion plate while the slide and pivot assembly is in at least a partially pulled out state.

Disclosed herein are systems, devices, and methods for a magnet system for a sputtering device. The disclosed magnet system may include a housing having a housing interior. The magnet system may also include a magnet holder disposed in the housing interior and supported by the housing in a preferably stationary manner. The magnet system may also include a dehumidifying device adjacent to or disposed in the housing interior for drying the housing interior.

A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl.sub.4), carbon tetrachloride (CCl.sub.4), a hydrocarbon (C.sub.xH.sub.y where x and y are integers) and molecular chlorine (Cl.sub.2), boron trichloride (BCl.sub.3), and thionyl chloride (SOCl.sub.2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.