Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.

There is provided a technique that includes: forming a film by heating a substrate held on a substrate mounting table and supplying gas from a shower head to the substrate; performing a first temperature measurement by measuring a first temperature of the shower head and storing a measurement value of the first temperature as reference data; setting processing of a subsequent substrate; performing a second temperature measurement by measuring a second temperature of the shower head before loading the subsequent substrate; calculating a difference between the first temperature and the second temperature; and adjusting a temperature of the shower head to be equal to the first temperature by operating the heater and adjusting a distance between the shower head and the substrate mounting table according to the difference between the first temperature and the second temperature.

A dual mode power device for controlling voltage level to a plasma processing apparatus is disclosed. The dual mode power device comprises a power supply connector and a control circuit. The power supply connector is connected to a first voltage power supply or a second voltage power supply. The control circuit is connected between an output of the power supply connector and a first and second voltage subsystem of the plasma processing apparatus. The control circuit provides a first voltage based on the first voltage power supply to the first voltage subsystem in a first mode of operation of the plasma processing apparatus. The control circuit provides a second voltage based on the second voltage power supply to the second voltage subsystem in a second mode of operation of the plasma processing apparatus.

A plasma processing apparatus includes a support structure configured to support a workpiece and a first drive device configured to rotate the support structure about a first axis extending in a direction orthogonal to a vertical direction. The support structure includes a holding unit including an electrostatic chuck and a container provided under the holding unit. The container includes a tubular container body, and a bottom cover configured to close a bottom side opening of the container body and to be detachable from the container body. A maintenance method includes: rotating a support structure about a first axis such that the bottom cover is positioned above an electrostatic chuck, removing the bottom cover from the container body, and maintaining a component provided in the container body.

A first edge ring is removed from a substrate support within a process module using a transfer robot. The transfer robot is then used to place a second edge ring on the substrate support. An image sensor (e.g., a disk-shaped wireless image sensor) is positioned over the second edge ring using the transfer robot. The image sensor generates image information, which is analyzed to determine alignment of the second edge ring.

Provided is a barrier seal for an electrostatic chuck in the plasma etching process. The barrier seal comprises multiple sealing portions to block the connecting layer of the electrostatic chuck and the plasma gas. The groove of the electrostatic chuck may be completely filled by the barrier seal. Even one of the multiple sealing portions is destroyed in the plasma etching process by the plasma gas, the barrier seal still prevents leaking of the electrostatic chuck effectively. The barrier seal provides a buffer period for engineers to replace the damaged barrier seal before the leaking occurs. Danger of leaking caused by abrupt breaking of the barrier seal is reduced. Furthermore, the barrier seal facilitates stability and safety of the plasma etching process. The yield of products manufactured by the electrostatic chuck may be improved.

An apparatus for plasma atomic layer deposition includes a tubular, insulating injector adhesion preventive member mountable to a gas-introducing opening section from inside a film forming chamber, a tubular, insulating exhaust adhesion preventive member mountable to an exhaust opening section from inside the film forming chamber, and an insulating film forming chamber adhesion preventive member mountable to an inner wall side of the film forming chamber. The injector adhesion preventive member and the exhaust adhesion preventive member are separated from each of a plate electrode and a counter electrode side, and the film forming chamber adhesion preventive member is disposed on each side of the injector adhesion preventive member and the exhaust adhesion preventive member to be separated from each of the plate electrode and the counter electrode side. The apparatus further includes an upper and lower inert-gas supply port that purges inert gas toward inside the film forming chamber.

Apparatus and methods for calibrating a height-adjustable edge ring are described herein. In one example, a calibration jig for positioning an edge ring relative to a reference surface is provided that includes a transparent plate, a plurality of sensors coupled to a first side of the transparent plate, and a plurality of contact pads coupled to an opposing second side of the transparent plate.

Apparatus and methods for calibrating a height-adjustable edge ring are described herein. In one example, a calibration jig for positioning an edge ring relative to a reference surface is provided that includes a transparent plate, a plurality of sensors coupled to a first side of the transparent plate, and a plurality of contact pads coupled to an opposing second side of the transparent plate.

The inventive concept provides a substrate treating method. The substrate treating method includes taking in a substrate to a treating space to mount on a support unit; upwardly moving the support unit after mounting the substrate on the support unit; determining whether the support unit moves normally after the upwardly moving the support unit; and treating the substrate by generating a plasma in the treating space, and wherein at the determining whether the support unit moves normally, before the plasma is generated at the treating space at the treating the substrate, whether a pulse distance matching a predetermined distance data according to a pulse value of a driving unit which pulse-moves a moving body which moves the support unit in a top/down direction, matches a movement distance of the moving body is determined, and an interlock is generated if the pulse distance and the movement distance is different.