A substrate processing apparatus is disclosed. Exemplary substrate processing apparatus includes a plurality of reaction chambers; a shared remote plasma unit; a plurality of first cleaning gas lines configured to fluidly couple the shared remote plasma unit to the reaction chambers; and a cleaning gas source to provide the shared remote plasma unit with a cleaning gas; wherein each of the first cleaning gas lines is provided with a valve and is connected to a sidewall of the reaction chamber.

Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two, preferably more than two, power output ports each for connection to one of the plasma process chambers, and a controller configured to control the power converter to deliver the bipolar output power to the power output ports, using one or more control parameters selected from a list comprising: power, voltage, current, excitation frequency, and threshold for protective measures, such that at least one of the control parameters at a first power output port is different from the corresponding control parameter at a different power output port.

Embodiments of the present disclosure provide a plasma processing system, comprising: a transfer chamber, the transfer chamber including a plurality of sidewalls, each sidewall being connected with a plurality of process chambers; each process chamber including a base therein, the base including a central point; wherein at least two process chambers connected to a same sidewall form one process chamber group, wherein a first distance is provided between the central points of two bases in a first process chamber group, and a second distance is provided between the central points of two bases in a second process chamber group, the first distance being greater than the second distance; and the transfer chamber comprises a mechanical transfer device; a rotating pedestal includes two independently movable robot arms thereon, the two robot arms; and the two robot arms both include a plurality of rotating shafts and a plurality of rotating arms, wherein a remote rotating arm of each robot arm further includes an end effector for holding a substrate. The mechanical transfer device according to the present disclosure may simultaneously retrieve and place the substrate in the process chamber group with the first distance and the substrate in the process chamber group with the second distance.

A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.

A system for generation of radicals in a liquid (e.g., OH and derivatively H.sub.2O.sub.2 in water) by a plasma reactor, including a first electrode having a rod shape or a tubular shape; a dielectric tubular housing coaxial with the first electrode and enclosing the first electrode, and having a gap to the first electrode of 0.3-30 mm; a second electrode on an outside of the dielectric tubular housing and coaxial with first electrode with a gap 0.3-30 mm; a high voltage power supply providing voltage oscillations or pulses of 0.5-30 kV and a frequency 1-50 kHz between the first and second electrodes; and a pump or a Venturi injector on an output of the plasma reactor and a chock valve on an input of reactor for generating a low water pressure in the gap between first and second electrodes so as to generate boiling in the gap.

An apparatus to determine occurrence of an anomalous plasma event occurring at or near a process station of a multi-station integrated circuit fabrication chamber is disclosed. In particular embodiments, optical emissions generated responsive to the anomalous plasma event may be detected by at least one photosensor of a plurality of photosensors. A processor may cooperate with the plurality of photosensors to determine that the anomalous plasma event has occurred at or near by a particular process station of the multi-station integrated circuit fabrication chamber.

The current disclosure relates to a vapor deposition assembly for depositing material on a substrate. The vapor deposition assembly comprises a treatment chamber for treating susceptors from a deposition chamber that comprises multiple, moveable susceptors. The assembly further comprises a transfer system configured and arranged to move a susceptor between the deposition chamber and the treatment chamber. The disclosure further relates to a method of cleaning as susceptor and to a susceptor treatment apparatus.

A vacuum processing apparatus with excellent processing uniformity and capable of effectively performing routine and non-routine maintenance even when an object to be processed has an increased diameter is provided. In the vacuum processing apparatus having a vacuum transfer chamber, this apparatus comprises a lower vessel having a cylindrical shape, a sample stage unit including a sample stage and a ring-shaped sample stage base having support beams disposed axisymmetric with respect to a central axis of the sample stage, an upper vessel having a cylindrical shape, and a moving mechanism which is fixed to the sample stage base and is capable to move the sample stage unit movable in a vertical direction and in a horizontal direction.