Methods and apparatuses for depositing thin films using plasma-enhanced atomic layer deposition (PEALD) with ramping radio-frequency (RF) power are provided herein. Embodiments involve increasing the RF power setting of PEALD cycles after formation of initial screening layers at low RF power settings.

A substrate processing system includes a vacuum transfer module and a plurality of process modules defining respective processing chambers. The plurality of process modules includes a first row of the process modules arranged on a first side of the vacuum transfer module and a second row of the process modules arranged on a second side of the vacuum transfer module opposite the first side. Each of the plurality of process modules includes a gas box arranged above the process module and configured to selectively supply at least one gas and/or gas mixture into the processing chamber of the process module and a radio frequency (RF) generator configured to generate RF power to create plasma within the processing chamber. The RF generator is arranged above the process module and the gas box and the RF generator are arranged side-by-side above the process module.

A plasma source ion implanter with a preparation chamber for linear or cross transferring workpiece is provided to solve the problem of low production efficiency of an existing single vacuum chamber plasma source ion implanter. The ion implanter includes a preparation chamber, an implantation chamber and a workpiece transferring chamber. The implantation chamber is provided to maintain a high vacuum condition all the time, and the time for pre-vacuuming the base vacuum is ignored. The ion implanter with dual chamber configuration is able to greatly shorten the production cycle. The structural configurations of the preparation chamber and the implantation chamber are basically the same, and are adapted to be used independently when ion implantation is required for a long time.

A radio frequency (RF) power generator adapted for coupling to a multi-station integrated circuit fabrication chamber may include an oscillator to provide a periodic signal and one or more preamplifiers each having an input port to receive a signal from the oscillator and having an output port to provide an amplified signal. The RF generator may additionally include one or more constant-gain amplifiers, each having an input port to receive a signal from the one or more preamplifiers, and an output port configured for coupling an amplified signal to an electrode for generating a plasma in an assigned station of the multi-station integrated circuit fabrication chamber.

A substrate processing apparatus according to an embodiment includes a door portion that is arranged so as to be capable of opening and closing an opening portion from inside a second container and is configured to airtightly seal a first container, and the door portion includes a peripheral area that includes a surface facing a side wall of the second container around the opening portion while the door portion is in a closed state, an inside area that is an area surrounded by the peripheral area and includes a surface facing the opening portion while the door portion is in the closed state, a groove portion that is provided in the peripheral area to surround at least part of the inside area and includes a first step and a second step, the second step being positioned closer to the inside area than the first step, and a sealing member that continuously surrounds the inside area at a position closer to the inside area than the first step.

An apparatus for coating a PET container in a coating chamber includes a lance that introduces material and energy into the container while it is in the coating chamber. This results in a reaction that coats the bottle's interior with a silicon oxide. Before reaching the coating chamber, the bottle will have passed through a cooling system connected to coating chamber. The cooling system passes cooled gas through a feed, thereby cooling said bottle before it reaches the coating chamber.

Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be formed as a part of a capacitor, a gate insulating layer, or any suitable insulating layer in electronic devices, such as display devices. The layer stack includes a second dielectric layer disposed on the first dielectric layer and the metal layer, and the high K dielectric layer containing zirconium dioxide or hafnium dioxide disposed on the second dielectric layer. The second dielectric layer provides a homogenous surface on which the high K dielectric layer is formed. The homogeneous surface enables the high K dielectric material to be deposited uniformly thereover, resulting in a uniform thickness profile.

A patterned backside stress compensation film having different stress in different sectors is formed on a backside of a substrate to reduce combination warpage of the substrate. The film can be formed by employing a radio frequency electrode assembly including plurality of conductive plates that are biased with different RF power and cause local variations in the plasma employed to deposit the backside film. Alternatively, the film may be deposited with uniform stress, and some of its sectors are irradiated with ultraviolet radiation to change the stress of these irradiated sectors. Yet alternatively, multiple backside deposition processes may be sequentially employed to deposit different backside films to provide a composite backside film having different stresses in different sectors.

To provide a highly productive, compact, and inexpensive film deposition apparatus while ensuring the stability of the film deposition quality, the apparatus includes a rotating body configured to be rotatable and provided with a holding unit that holds an object to be transferred in an attachable and detachable manner, the holding unit being provided along an outer peripheral portion of the rotating body; and a transfer mechanism having a gripping mechanism capable of gripping and releasing the object, the transfer mechanism transferring the object held by a predetermined device to the holding unit of the rotating body and transferring another object held by the rotating body to the predetermined device.

A substrate processing apparatus includes an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.