Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

A method for fabricating a semiconductor device includes loading a substrate into a process chamber, processing the substrate in the process chamber, using a plasma generated inside the process chamber, receiving a plasma light emitted from the plasma, selecting a target light from the plasma light, such that the target light is related to a surface condition of the substrate, and analyzing an intensity of the target light over time to monitor the surface condition of the substrate.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

A calibration method includes placing an LED light source having a given wavelength range inside a reference apparatus; acquiring first data as an emission intensity of light at a wavelength, a light amount of the light being adjusted in stages by changing the light amount output from the LED light source; storing the first data in a memory; placing the LED light source in a calibration target apparatus; acquiring second data as an emission intensity of light at a wavelength, a light amount of the light being adjusted in the stages by changing the light amount output from the LED light source; and calculating a calibration formula based on the first data stored in the memory and the second data.

Disclosed are a method of monitoring a semiconductor device fabrication process and a method of fabricating a semiconductor device using the same. The monitoring method may include determining a normalization range of a target byproduct, which is a measurement target of byproducts produced in a chamber by an etching process, the byproducts including the target byproduct and a non-target byproduct, the target byproduct including first and second target byproducts, which are respectively produced by and before the etching process on a to-be-processed layer, obtaining a first index from a ratio of the target byproduct to the non-target byproduct, obtaining a second index by subtracting an emission intensity of the second target byproduct from the first index, obtaining a third index by integrating the second index on a time interval, and estimating a result of the etching process and presence or absence of a failure, based on the third index.

An apparatus includes a beam conditioning assembly configured to output one or more wavelengths to a substrate being processed and receive one or more reflected wavelengths from the substrate, and a machine learning device configured to process the one or more reflected wavelengths to predict a process variable and compare the predicted process variable with a measured process variable to obtain a comparison result.

A process for quantifying the amount of unbound metal and bound metal in solution is provided. A process for quantifying the amount of bound metal amino acid chelate and free ligand in a solid (e.g., dry mixture such as an animal feed) is also provided.

This disclosure relates to systems and methods element identification and quantification. The method includes generating pulsed plasma based on an input voltage and a current so that the pulsed plasma interacts with a particle and atomizes the particle when the pulsed plasma is disposed in a flow field, identifying an atomic emission of the pulsed plasma with an optical sensor, determining element identification and quantification based on the identified emission of pulsed plasma, generating DC plasma having an electrical field based on an input DC voltage and a DC current, positioning the DC plasma in a flow field, detecting a change in the electrical field of the DC plasma, and determining a size of the particle based on the change in electrical field.

Methods for revitalizing components of a plasma processing apparatus that includes a sensor for detecting a thickness or roughness of a peeling weakness layer on a protective surface coating of a plasma processing tool and/or for detecting airborne contaminants generated by such peeling weakness layer. The method includes detecting detrimental amounts of peeling weakness layer buildup or airborne concentration of atoms or molecules from the peeling weakness layer, and initiating a revitalization process that bead beats the peeling weakness layer to remove it from the component while maintaining the integrity of the protective surface coating.