A cathode assembly for a physical vapor deposition (PVD) system includes a target holder and a thickness detector. The target holder is for holding a target, in which the target has a first major surface and a second major surface. The first major surface and the second major surface are respectively proximal and distal to the target holder. The thickness detector is disposed on the target holder. At least one portion of the first major surface is exposed to the thickness detector for allowing the thickness detector to detect the thickness of the target through the first major surface.

Methods for treating texturized surfaces of sputter targets in order to improve adhesion and retention of deposited particles thereon. The target surfaces may first be texturized by a precursor texturizing method such as bead blasting, grit blasting, plasma spraying, or a twin-wire-arc spraying (TWAS) method. The thus textured surface is then sprayed or blasted with ice particles to form an optimized textured surface. The ice particles may comprise sublimable particles such as frozen carbon dioxide or dry ice. Also, argon may be used as exemplary ice particles.

Embodiments described herein relate to shields for use in target assemblies in semiconductor process chambers. The shields can be used to shield exposed surfaces and chamber components within the process chambers such that unwanted redeposits are prevented from forming on the exposed surfaces and other chamber components. In some embodiments, the shields are electrically floating and are configured to cover the ends of the target. The target assembly has a target support secured to a mounting plate and a plurality of pins extending therefrom. Each of the shields has a shield body with an opening. The shield body has alignment features configured to align with the plurality pins such that the shield connects with the target support. Shields as described herein can be made of smooth edges, helping to minimize particle generation and to prevent arcing at least partially caused by sharp edges of shields.

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

A termination unit for a deposition system, comprising a device for effecting a function, the device comprising at least one component comprising electrical steel, and at least one shielding element which is electrically conductive. The shielding element is configured so: an effect of a neighboring current on the component comprising electrical steel, which is not contributing to the function of the device, is mitigated, wherein this neighboring current has a first topology; and so an effect of at least one neighboring current having a different topology than the first topology is not significantly mitigated. The device moreover comprises a current transfer means neighboring the at least one component comprising electrical steel, and adapted for guiding a current according to the first topology and for transferring power to a target when mounted on the termination unit.

In a film forming unit (FU) for a sputtering apparatus according to this invention, a supporting plate is provided with: a target having bonded thereto a backing plate; a magnet unit; and driving device for reciprocating the target along the supporting plate relative to the magnet unit. The backing plate is provided, in a protruded manner, with a supply pipe and a discharge pipe in communication with a coolant passage for the backing plate. A slit hole, which is elongated in the reciprocating direction of the target and through which the supply pipe and the discharge pipe penetrate, is formed in the supporting plate. The supporting plate has on its lower surface a cap body which hermetically encloses those portions of the supply pipe and the discharge pipe, inclusive of the slit hole, which are protruded downward from the slit hole.

The present invention discloses a film formation device. The film formation device includes a vacuum chamber, an evacuation mechanism communicating with an interior of the vacuum chamber, a substrate holding means capable of holding a plurality of substrates, and a film formation area located in the interior of the vacuum chamber. The film formation area allows sputter ions to be emitted from a target by sputtering and arrive at the substrates. The film formation device further includes an isolation means located in the vacuum chamber. The isolation means isolates the film formation area from other areas in the vacuum chamber. The isolation means is arranged such that the film formation area communicates with an exterior of the film formation area.

A rotary sputtering cathode assembly is provided that comprises a rotatable target cylinder having a first end and an opposing second end. A first power transfer apparatus is configured to carry radio frequency power to the first end of the target cylinder, and a second power transfer apparatus is configured to carry radio frequency power to the second end of the target cylinder. Radio frequency power signals are simultaneously delivered to both of the first and second ends of the target cylinder during a sputtering operation.

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

A substrate processing apparatus includes a supporting table having a mounting region for a substrate. A rotation shaft supporting a shutter extends in a vertical direction. The shutter is moved between a first region above the supporting table and a second region by rotating the rotation shaft about its central axis. The shutter includes a pipe having gas output holes. When the shutter is disposed in the first region, the gas output holes are located outside the mounting region in a rotation direction from the second region toward the first region. The minimum distance between the central axis and the gas output holes is smaller than or equal to the minimum distance between the central axis and the mounting region. The maximum distance between the central axis and the gas output holes is greater than equal to the maximum distance between the central axis and the mounting region.