A deposition apparatus includes a shield member having a lattice shape in a plan view, the lattice shape including short side edges extending along a first direction and long side edges extending along a second direction, the short side edges including first and second short side edges, a bracket member including a first bracket member coupled to the first short side edge, and a second bracket member coupled to the second short side edge, a plurality of anode bars extending along the second direction and stably placed on each of the first bracket member and the second bracket member, and a target member covering the plurality of anode bars. An anode bar of the plurality of anode bars protrudes outward beyond at least one of the first bracket member and the second bracket member, and the anode bar is physically separated from the shield member by the bracket member.

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

The object of the technique disclosed in this specification is to prevent or reduce the occurrence of chipping of a ceramic tubular member.

A holding device is a device that includes a plate-like member, a tubular member, and a connecting member and holds an object on a holding surface of the plate-like member. The tubular member is made of ceramic and is joined to a second surface of the plate-like member at an end of the tubular member on one side in a first direction, which is perpendicular to the holding surface. The tubular member has, at an end thereof on the other side in the first direction, a flange portion having a first through-hole. The connecting member is disposed on the other side of the tubular member in the first direction and has, in a third surface, which is an end face of the connecting member on one side in the first direction, a hole into which a fastening member inserted through the first through-hole in the flange portion is to be screwed. A specific portion, which is a portion in an outer edge line of a fourth surface of the tubular member, the portion overlapping a minimum virtual circle covering the fourth surface, is not in contact with the third surface of the connecting member.

Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.

An assembly for cathodic arc deposition of a material onto an article. The assembly includes a chamber for receiving an article to be coated and a rotating target. The rotatable target has a surface from which a plasma material is ejected. An anode ring is positioned a first distance from the surface of the rotatable target. The anode ring has an opening with a central axis that is parallel to a rotational axis of the rotatable target and offset a second distance from the rotational axis. A spark device is disposed in the chamber for generating an arc on the surface of the rotatable target. The assembly configured to direct a stream of charged particles ejected from the surface of the target through the opening of the anode ring to the article to be coated.

Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

A pulsed power system and a pulsed power sputtering system are disclosed. The pulsed power system includes a first power source that is configured to apply a first voltage at a first power lead that alternates between positive and negative relative to a second power lead during each of multiple cycles. A second power source is coupled to a third power lead and the second power lead, and the second power source is configured to apply a second voltage to the third power lead that alternates between positive and negative relative to the second power lead during each of the multiple cycles. A controller is configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second power lead during another portion of each cycle.

Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.

Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight.

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.