A magnetron sputtering apparatus for depositing material onto a substrate, comprises: a chamber comprising a substrate support and a target; a plasma production device configured to produce a plasma within the chamber suitable for sputtering material from the target onto the substrate; and a thermally conductive grid comprising a plurality of cells. Each cell comprises an aperture and the ratio of the height of the cells to the width of the apertures is less than 1.0. The grid is disposed between the substrate support and the target and is substantially parallel to the target. The upper surface of the substrate support is positioned at a distance of 75 mm or less from the lower surface of the target.

A magnetron sputtering device in one embodiment of the present disclosure includes a support table supporting thereon a base substrate, and a floating mask arranged at a first side of the support table and substantially parallel to the support table. The sputtering gap measurement apparatus includes: a horizontal testing platform arranged on the support table during the measurement, a first edge of the horizontal testing platform being flush with an edge of the first side of the support table in the case that the horizontal testing platform is located at a first position; a first movement mechanism configured to control the horizontal testing platform to move in a direction close to the floating mask, the horizontal testing platform being in contact with the floating mask in the case that the horizontal testing platform has moved to a second position; and a distance measurement mechanism configured to measure a movement distance of the horizontal testing platform from the first position to the second position.

A processing device according to one embodiment includes an object placement unit, a source placement unit, a collimator, and a temperature adjusting unit. The object placement unit is configured to have an object arranged. The object placement unit is configured to have an object placed thereon. The source placement unit is arranged apart from the object placement unit and configured to have a particle source placed thereon, the particle source being capable of ejecting a particle toward the object. The collimator configured to be arranged between the object placement unit and the source placement unit, includes walls, and is provided with through holes formed by the walls and extending a direction from the object placement unit to the source placement unit. The temperature adjusting unit is configured to adjust a temperature of the collimator.

Thin films of nickel-copper binary oxynitride (NiCuO.sub.xN.sub.y) were deposited on the surface of AISI 3161 stainless steel and glass substrates using reactive phase RF sputtering with a thickness between 700 and 2100 nm under different deposition conditions from a bimetallic precursor target of nickel and copper under specific conditions, such as: base pressure, working pressure, argon flow, oxygen flow, nitrogen flow, power the NiCu precursor target, target-substrate distance and deposition time. The films were characterized and made it possible to carry out a preliminary study of biocompatibility and a characterization according to their optical properties

A PVD chamber deposits a film with high thickness uniformity. The PVD chamber includes a coil of an electromagnetic that, when energized with direct current power, can modify plasma in an edge portion of the processing region of the PVD chamber. The coil is disposed within the vacuum-containing portion of the PVD chamber and outside a processing region of the PVD chamber.

Methods and apparatus for detecting a shutter disk assembly in a process chamber using a number of sensors. A first, second, and third sensor in a shutter housing for a shutter disk assembly provide indications of a status of the shutter disk assembly. The indications are used in part to determine the operational status of the shutter disk assembly along with process information from a process controller. The operational status is then used to alter a process of the process chamber when necessary.

A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.