Patent classifications
H01J37/345
Cathode Unit for Magnetron Sputtering Apparatus and Magnetron Sputtering Apparatus
A cathode unit includes first and second magnet units that are driven to rotate around an axis on a side opposed to a sputtering surface of a target. The first magnet unit is configured to cause a first leakage magnetic field to act on a space in front of the sputtering surface including a target center inward. The second magnet unit is configured to cause a second leakage magnetic field to act locally in the space in front of the sputtered surface located between the target center and the outer edge of the target and to enable self-holding discharge under low pressure of plasma confined by the second leakage magnetic field.
MAGNETIC ANODE FOR SPUTTER MAGNETRON CATHODE
A rotary sputter magnetron assembly for use in sputtering target material onto a substrate is provided. The assembly comprises a longitudinally extending target tube having a longitudinal central axis, said target tube extending about a magnet array that is configured to generate a plasma confining magnetic field adjacent the target tube, said target tube supported for rotation about its longitudinal central axis and a pair of side shunts positioned parallel to the longitudinal central axis, and on opposing lengthwise sides of said target tube.
PHYSICAL VAPOR DEPOSITION APPARATUS
A physical vapor deposition (PVD) apparatus includes: a vacuum chamber; a pedestal arranged in the vacuum chamber and configured to support a substrate; a target arranged on the vacuum chamber and including a deposition material; a shield arranged on an inner sidewall of the vacuum chamber toprotect the vacuum chamber from the deposition material; a target power supply applying a target voltage to the target to generate plasma in the vacuum chamber; and a magnet configured to induce the plasma to the target; and a magnetic field formation line connected with the target power supply, wherein the magnetic field formation line surrounds the shield symmetrically with respect to a center of the shield to form a magnetic field in the vacuum chamber.
Deposition system with a multi-cathode
A deposition system, and a method of operation thereof are disclosed. The deposition system comprises a cathode assembly comprising a rotating magnet assembly including a plurality of outer peripheral magnets surrounding an inner peripheral magnet.
Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.
Sputtering system and method
A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.
Method for monitoring usage of a physical vapor deposition (PVD) target with an ultrasonic transducer
A system for semiconductor manufacturing that uses ultrasonic waves for estimating and monitoring a remaining service lifetime of a consumable element is provided. A consumable element comprises a front side arranged inside a process chamber and a back side, opposite the front side, arranged outside the process chamber. An ultrasonic transducer is arranged on the back side of the consumable element, and directed towards the front side of the consumable element. A monitoring unit is configured to estimate and monitor a remaining service lifetime of the consumable element using the ultrasonic transducer. A method for estimating and monitoring the remaining service lifetime of the consumable element using ultrasonic waves is also provided.
CATHODIC ARC SOURCE
A cathodic arc evaporation apparatus including a target which has a target surface including an active surface from where material can be evaporated in a cathodic arc process; a confinement surrounding an outer boarder of the target surface; an anode having an electron receiving surface, the anode encompassing at least one of the target and the confinement in at least one of a target plane and an axial distance in front of the active surface; and a magnetic guidance system adapted to provide a magnetic field at the target surface being essentially in parallel to at least an outer region of the target surface so that magnetic field lines are in parallel to the target surface or inclined to it in an acute angle α, whereat an active surface is defined in a surface area where magnetic field lines enter the target surface in an acute angle α≤45°.
Multifocal magnetron design for physical vapor deposition processing on a single cathode
An apparatus has a cathode target with a cathode target outer perimeter. An inner magnet array with an inner magnet array inner perimeter is within the cathode target outer perimeter. The inner magnet array includes an inner magnet array base portion and an inner magnet array upper portion. A keeper plate assembly is connected to the inner magnet array upper portion and isolates the inner magnet array upper portion from the inner magnet array base portion. An outer magnet array is connected to a bottom surface of the keeper plate. The outer magnet array has an outer magnet array outer perimeter larger than the inner magnet array inner perimeter. The inner magnet array upper portion has a first magnetic orientation and the outer magnet array and the inner magnet array base portion have a second magnetic orientation opposite the first magnetic orientation.
Arc evaporation source
Provided is an arc evaporation source equipped with a target, a ring-shaped magnetic field guide magnet and a back side magnetic field generation source. The magnetic field guide magnet is aligned in a direction perpendicular to the evaporation face of the target and has a polarity that is the magnetization direction facing forward or backward. The back side magnetic field generation source is disposed at the rear of the magnetic field guide magnet, which is at the side of the back side of the target, and forms magnetic force lines running in the direction of magnetization of the magnetic field guide magnet. The target is disposed such that the evaporation face is positioned in front of the magnetic field guide magnet.