A cathode assembly for a magnetron sputtering system includes a target comprising sputterable material having an at least partially exposed, substantially planar sputtering or erosion surface and a target support configured to support and move the target during sputtering. In certain exemplary embodiments the cathode assembly further comprises a magnetic field source, e.g., a magnet array behind the target. The target support is configured to move the sputtering surface of the target by rotating or spinning the target in the plane of the sputtering surface, moving the target linearly back-and-forth or otherwise. The target support is configured to move the target relative to the magnetic field source, which may be stationary during sputtering, e.g., relative to the cathode assembly and vacuum chamber in which the sputtering is performed. A sputtering system including such a cathode assembly also is provided. A method of sputtering is further provided, employing such a cathode assembly.

Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si.sub.1-xGe.sub.x film on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.

In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, it is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and the substrate is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.

A magnetron sputtering electrode for use in a rotatable cylindrical magnetron sputtering device, the electrode including a cathode body defining a magnet receiving chamber and a cylindrical target surrounding the cathode body. The target is rotatable about the cathode body. A magnet arrangement is received within the magnet receiving chamber, the magnet arrangement including a plurality of magnets. A shunt is secured to the cathode body and proximate to a side of the magnet arrangement, the shunt extending in a plane substantially parallel to the side of the magnet arrangement. A method of fine-tuning a magnetron sputtering electrode in a rotatable cylindrical magnetron sputtering device is also disclosed.

In one embodiment, a magnetron assembly comprises a plurality of magnets and a yoke configured to hold the plurality of magnets in at least four independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion. The outer portion substantially surrounds the perimeter of the inner portion. The magnets used to form the outer portion have a first polarity and the magnets used to form the inner portion having a second polarity. The outer portion of the pattern comprises a pair of elongated sections that are substantially parallel to one another. The outer portion of the pattern comprises a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections and wherein each turnaround section comprises a plurality of magnets having the first polarity. Other embodiments are described.

A sputtering apparatus comprises: a target holder; and a magnet unit of a rectangular shape having long and short sides. The magnet unit includes: a first magnet; a second magnet disposed surrounding the first magnet and magnetized in a different and opposite direction from a direction of magnetization of the first magnet, and a third magnet located at part between the first magnet and the second magnet in the short-side direction and at least at a center position between the first magnet and the second magnet, the third magnet being magnetized in the short-side direction. In the third magnet, a surface facing the second magnet has the same polarity as that of a surface of the second magnet on the target holder side, and a surface facing the first magnet has the same polarity as that of a surface of the first magnet on the target holder side.

One embodiment is directed to a magnetron assembly comprising a plurality of magnets, and a yoke configured to hold the plurality of magnets in at least four straight, parallel, independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion, wherein the outer portion substantially surrounds the perimeter of the inner portion. The end portions of the linear array comprise a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections of the outer portion. The magnets in each turnaround section are arranged to form at least two or more different curves in the magnetic field that are offset from each along the target rotation axis.

Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate.

In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet placement face on which first and second magnetic-pole portions are placed, the magnet placement face having fifth and sixth ends extending in the first direction and being shorter than the first and second ends, and seventh and eighth ends extending in the second direction, being longer than the fifth and sixth ends, and being longer than the third and fourth ends. The apparatus further includes a carrier transporter transporting the carrier along the first direction. The carrier transporter can transport the carrier such that the third and fourth ends pass under a center line of the magnet placement face.

A target device for a magnetic spattering coating device includes: a spattering target fixture; a target bearing plate installed on the spattering target fixture, for bearing a target; a magnetic pole device fixed on one surface of the spattering target fixture backing toward the target bearing plate, for producing a horizontal magnetic field on one surface of the target. A predetermined interval is formed between the magnetic pole device and corresponding margins of the target bearing plate. The present invention can not only enhances utilization of the target but also makes the thin film deposited on the substrate highly well-distributed.