A PVD method includes tilting a first magnetic element over a back side of a target. The first magnetic element is moved about an axis that extends through the target. Then, charged ions are attracted to bombard the target, such that particles are ejected from the target and are deposited over a surface of a wafer. By tilting the magnetic element relative to the target, the distribution of the magnetic fields can be more random and uniform.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.

The present disclosure provides systems and methods of controlling a magnetically confined plasma sputtering process using the waste heat transferred from the plasma into the target material and then into thermally controlled magnetic field adjustment assemblies that modify the strength of the plasma confinement magnetic fields on the target material.

Various communication systems may benefit from improved voice call support. For example, it may be helpful for a user equipment in a first radio access technology that may not support voice calls to initiate a voice call with a second radio access technology. A method includes initiating a voice call between a user equipment to an entity in a second radio access technology cell. The user equipment is located in a first radio access technology cell. The method also includes registering the user equipment with the second radio access technology cell. In addition, the method includes conducting the voice call with the entity via the second radio access technology cell.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

A sputtering apparatus includes a base on which a substrate is mounted, an annular member disposed at an outer periphery of the base to surround a side surface and a backside of the substrate without in contact with the substrate, and an edge cover that covers an outer edge of an upper surface of the substrate mounted on the base. The annular member has a first surface facing the backside of the substrate mounted on the base with a gap, a second surface facing the side surface of the substrate mounted on the base with a gap, and a tapered surface formed at a corner portion between the first surface and the second surface.

A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

A deposition apparatus, including: a substrate supporter, wherein a substrate is fixed to the substrate supporter; a target facing the substrate; a first magnet assembly disposed below the target and including a first magnet extending in a first direction and having a first length, and a second magnet at least partially surrounding the first magnet; and a second magnet assembly disposed below the target and spaced apart from the first magnet assembly in a second direction which is substantially perpendicular to the first direction, and including a first magnet extending in the first direction and having a second length greater than the first length, and a second magnet at least partially surrounding the first magnet, and wherein the second magnet of the first magnet assembly and the second magnet of the second magnet assembly have substantially the same length as each other in the first direction.