A method includes loading a wafer into a sputtering chamber, followed by depositing a film over the wafer by performing a sputtering process in the sputtering chamber. In the sputtering process, a target is bombarded by ions that are applied with a magnetic field using a magnetron. The magnetron includes a magnetic element over the target, an arm assembly connected to the magnetic element, a hinge mechanism connecting the arm assembly and a rotational shaft. The arm assembly includes a first prong and a second prong at opposite sides of the hinge mechanism. The magnetron further includes a controller that controls motion of the first arm assembly, enabling the first prong to revolve in an orbital motion path about the first hinge mechanism while the second prong remains stationary.

The present disclosure provides a deposition equipment, which includes a reaction chamber, a carrier, a target material, a magnetic device are at least one shield unit. The carrier and the target material are disposed within the containing space, wherein the carrier is for carrying a substrate, also a surface of the target material faces the carrier and the substrate. The magnetic device is disposed on another surface of the target material, to generate a magnetic field within the containing space through the target material. The shield unit is made electrical conductor and is disposed between a portion of the magnetic device and a portion of the target material, wherein the shield unit is for partially blocking and micro-adjusting the magnetic field generated by the magnetic device within the containing space, such that to improve an evenness of thickness for a thin film formed on the substrate.

A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind.

Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis and rotatable about the central axis, a closed loop magnetic pole coupled to a first surface of the shunt plate and disposed 360 degrees along a peripheral edge of the shunt plate, and an open loop magnetic pole coupled at a the first surface of the shunt plate wherein the open loop magnetic pole comprises two rows of magnets disposed about the central axis.

There is described an intaglio printing plate coating apparatus comprising a vacuum chamber having an inner space adapted to receive at least one intaglio printing plate to be coated, a vacuum system coupled to the vacuum chamber adapted to create vacuum in the inner space of the vacuum chamber, and a physical vapour deposition (PVD) system adapted to perform deposition of wear-resistant coating material under vacuum onto an engraved surface of the intaglio printing plate, which physical vapour deposition system includes at least one coating material target comprising a source of the wear-resistant coating material to be deposited onto the engraved surface of the intaglio printing plate. The vacuum chamber is arranged so that the intaglio printing plate to be coated sits substantially vertically in the inner space of the vacuum chamber with its engraved surface facing the at least one coating material target. The intaglio printing plate coating apparatus further comprises a movable carrier located within the inner space of the vacuum chamber and adapted to support and cyclically move the intaglio printing plate in front of and past the at least one coating material target.

A plasma deposition apparatus includes a first plasma source that can produce a plasma confined in a magnetic field. The first plasma source includes a closed-loop electrode defining a center region therein and a central axis through the central region, and one or more magnets that are outside an inner surface of the closed-loop electrode. The magnets can produce a magnetic field in the center region. The one or more magnets can be at least partially embedded in the closed-loop electrode. The closed-loop electrode and the magnets can produce a plasma of ions to sputter atoms off a sputtering target or a backing plate.

The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

An apparatus for sputtering target material onto a substrate based on a plasma confining racetrack having two parallel straight portions and two turnaround portions includes a tubular target, an elongated magnet array, and a drive mechanism. The tubular target has two ends in proximity to the two turnaround portions and a longitudinal axis about which the target is rotatable. The magnet array is supported within the target to generate a plasma-confining magnetic field. The array includes a central stationary portion of magnets and two axially movable shunts positioned at the ends of the stationary portion. Each shunt carries a magnet segment configured to slidably extend from each end of the stationary portion to define a gap. The gaps are positioned internal to the turnaround portions. The drive mechanism axially moves the shunts parallel to the longitudinal axis of the target to vary a width of the gaps.

A magnetic structure in a semiconductor apparatus is arranged outside of a reaction chamber of the semiconductor apparatus and includes an annular support member, a plurality of angle adjustment assemblies, and a plurality of magnetic members. The annular support member is arranged around the reaction chamber of the semiconductor apparatus. The plurality of angle adjustment assemblies are connected to the annular support member and distributed along a circumferential direction of the annular support member. The plurality of magnetic members are connected to the plurality of angle adjustment assemblies in a one-to-one correspondence. An angle adjustment assembly of the angle adjustment assemblies is configured to fix a corresponding magnetic member of the plurality of magnetic members at the annular support member and adjust a magnetic field line direction of the magnetic member and a magnitude of an included angle.