Provided a plasma process apparatus including a chamber including a plasma processing space, a substrate stage included in the chamber, the substrate stage including a seating surface, a target including deposition particles to be deposited on the substrate, a gas supplier configured to supply gas into the chamber, a plasma generator configured to generate plasma from the gas, the plasma generator configured to deposit the deposition particles on the substrate through the plasma, at least one permanent magnet on the target being rotatable and configured to distribute the plasma on the target through a magnetic field, and a coil assembly on an outer wall of the chamber and assembly including first through third side coils inclined and being configured to generate first through third vectors, respectively, and the coil assembly being configured to generate a magnetic field vector guiding the plasma through a combination of the first through third vectors.

A sputtering apparatus forms a thin film by depositing sputtered particles of a target on a substrate, using a magnetic field generated from a back surface side of the target toward the substrate provided to face a front surface of the target. The sputtering apparatus has a magnetic field generator provided on the back surface of the target, a rotor configured to rotate the magnetic field generator, and a cylindrical sputter adjustment member provided between the target and the substrate on a center axis connecting a center of the target and a center position of the substrate. The sputter adjustment member is made of a metal, and includes a hole located at a position including the center axis.