Provided is a sputtering target that is less likely to cause abnormal discharge. The sputtering target has a sputtering surface in which a lightness L in a Lab color system is more than 27 and 51 or less.

The fluoro-based polymer composite target for sputtering according to the present invention is excellent in adhesion with a metal electrode to which a voltage is applied, can prevent bending, and is capable of stably forming plasma by imparting conductivity even with industrially widely used DC and MF power supply systems, thereby allowing a fluorinated polymer to be effectively deposited on an adherend by sputtering.

A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 m width (e.g., less than about 50 m width). A process for making the target includes hot isostatically pressing, below a temperature of 1080 C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

A process for the formation of an LiM0.sub.2 (e.g., LiCoO.sub.2) sputtering target with a bi-modal grain size distribution (as in a hollow cylinder target body) that includes a CIP-based process involving, for example, forming or sourcing an LiMO.sub.2 (e.g., LiCoO.sub.2) powder; dispersion and milling (e.g., wet milling); binder introduction; drying (e.g., spray drying) to form a granulate; CIP processing of the granulate into a molded shape; and a heating cycle for debinding and sintering to form a densified sintered shape. The target body produced is suited for inclusion on a sputtering target assembly (as in a rotary sputtering target assembly with a plurality of cylindrical target bodies attached to a backing support). The invention is inclusive of the resultant target bodies formed under the CIP based process as well as an induction heater based process for attachment (e.g., metal solder bonding) of the low conductivity target body(ies) of LiMO.sub.2 (e.g., LiCoO.sub.2) to a common backing support through use of an added conductive wrap or layer provided to the target body and heated with the induction heater during the attachment process.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm.sup.3 and equal to or lower than 7.5 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

Methods for treating texturized surfaces of sputter targets in order to improve adhesion and retention of deposited particles thereon. The target surfaces may first be texturized by a precursor texturizing method such as bead blasting, grit blasting, plasma spraying, or a twin-wire-arc spraying (TWAS) method. The thus textured surface is then sprayed or blasted with ice particles to form an optimized textured surface. The ice particles may comprise sublimable particles such as frozen carbon dioxide or dry ice. Also, argon may be used as exemplary ice particles.

A process for producing a coating source for physical vapour deposition provides the coating source with a target layer formed of an at least two-phase composite which contains a metallic phase and at least one further phase and a mechanical stabilizing layer which is joined to the target layer on one side of the target layer. A first powder mixture which corresponds in terms of its composition to the at least two-phase composite and a second powder mixture which corresponds in terms of its composition to the mechanical stabilizing layer are densified hot in superposed layers. A coating source for physical vapour deposition is also provided.

A coating source for physical vapor deposition to produce doped carbon layers. The coating source is produced by way of sintering from pulverulent components and is formed of carbon as matrix material in a proportion of at least 75 mol % and at least one dopant in a proportion in the range from 1 mol % to 25 mol %.

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.