A process for producing a sputtering target in which a target material is diffusion-bonded to a top face of a backing plate material, the process comprising: a step of heating the top face of the target material by a hot plate while pressing from above thereby diffusion-bonding the target material to the backing plate material in such a manner that the step is performed at a center part prior to an outer peripheral part of the top face.

A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided.

A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 m width (e.g., less than about 50 m width). A process for making the target includes hot isostatically pressing, below a temperature of 1080 C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

Disclosed is a method for producing rotary sputtering target assemblies that are bonded to a suitable backing support. The bonding between the sputtering target body and the backing support is achieved by controlled heating under a suitable temperature, preferably with the help of conductive layer between the induction heater and internal target body that is inductively heated in a manner that enhances axial and radial gradient heating. A non-adhesive protective wrap can also be placed at the target body such as between the conductive wrap and target body.

A sputtering-target material (2) is composed of aluminum having a purity of 99.999 mass % or higher and unavoidable impurities. When an average crystal-grain diameter at the plate surface (21) is given as D.sub.s [m], an average crystal-grain diameter at a depth of .sup.th of the plate thickness (22) is given as D.sub.q [m], and an average crystal-grain diameter at a depth of of the plate thickness (23) is given as D.sub.c [m], the formulas below are satisfied, and the average crystal-grain diameter changes continuously in a plate-thickness direction.

D.sub.s230

D.sub.q280

D.sub.c300

1.2D.sub.q/D.sub.s

1.3D.sub.c/D.sub.s

A cylindrical sputtering target includes a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material. Where the joining material has a thickness of d (m), the joining material has a coefficient of thermal expansion of .sub.1 (m/mK), and a melting point of the joining material and room temperature have a difference of T (K), a surface of the cylindrical sputtering target member on the side of the joining material has a value of ten-point average roughness (Rz) fulfilling:
d (m).sub.1 (m/mK)T (K)Rz (m).

A process for preparing a sputtering target uses plasma spray technology to prepare a target, having a high density and a high purity comparable to that of an initial powder material. A powder to that is to be sprayed to a particle size range used for plasma spray is processed. a surface of a substrate is subjected to a surface treatment. A plasma sprayer sprays the powder onto the surface of the substrate that underwent surface treatment. The substrate that was sprayed is cleaned. The process can meet the requirements for preparation of large size targets needed to deposit both the electrolyte and the electrode films in the thin-film ion batteries.

A sputtering target for an insulating oxide film, the sputtering target including a sintered body including a lanthanum oxide and at least one selected from the group consisting of a beryllium oxide, a magnesium oxide, a calcium oxide, a strontium oxide, and a barium oxide, wherein lanthanum has highest molar ratio among elements other than oxygen contained in the sintered body.