The MCP assembly of this embodiment is formed at least of a conductive upper support member, an MCP unit, an output electrode, a flexible sheet electrode, and a conductive lower support member as a structure for improving handleability of a flexible sheet electrode having a mesh area. The flexible sheet electrode includes the mesh area provided with plural openings. The flexible sheet electrode and the lower support member are physically and electrically connected to each other, and the flexible sheet electrode is sandwiched between the upper support member and the lower support member. As a result, even if the flexible sheet electrode becomes thin as an opening ratio of the mesh area increases, potential is set while the flexible sheet electrode is firmly held in the MCP assembly.

An MCP assembly of this embodiment is provided with an MCP unit and a flexible sheet electrode having a structure for facilitating handling thereof as a single body. The flexible sheet electrode is constituted by a mesh area provided with plural openings and a deformation suppressing portion surrounding the mesh area. Both the mesh area and the deformation suppressing portion are comprised of the same conductive material, and physical strength of the deformation suppressing portion is higher than that of the mesh area. With this configuration, the physical strength of an entire flexible sheet electrode is secured even if an opening ratio of the mesh area is increased, so that the handling of the flexible sheet electrode as a single body is facilitated.

The MCP assembly of this embodiment is formed at least of a conductive upper support member, an MCP unit, an output electrode, a flexible sheet electrode, and a conductive lower support member as a structure for improving handleability of a flexible sheet electrode having a mesh area. The flexible sheet electrode includes the mesh area provided with plural openings. The flexible sheet electrode and the lower support member are physically and electrically connected to each other, and the flexible sheet electrode is sandwiched between the upper support member and the lower support member. As a result, even if the flexible sheet electrode becomes thin as an opening ratio of the mesh area increases, potential is set while the flexible sheet electrode is firmly held in the MCP assembly.

A time-of-flight mass spectrometer includes a beam irradiation unit that generates an ionized particle by emitting an ion beam in a pulse form to a sample, a mass spectrometry unit that causes the ionized particle to fly, an MCP disposed in the mass spectrometry unit to measure a mass by amplifying the ionized particle, an MCP power source that applies a voltage to the MCP, and an MCP gain adjustment unit that adjusts a gain of the voltage. The MCP gain adjustment unit adjusts the gain of the voltage until a subsequent pulse is emitted after the beam irradiation unit emits a first pulse of the ion beam.

An ion detection system is disclosed that comprises one or more first devices (11) configured to produce secondary electrons in response to incident ions. The one or more first devices (11) comprise a first ion collection region and a second ion collection region and are configured to produce first secondary electrons in response to one or more ions incident at the first ion collection region and to produce second secondary electrons in response to one or more ions incident at the second ion collection region. The ion detection system also comprises a first output device (14) configured to output a first signal in response to first secondary electrons produced by the one or more first devices (11) and a second output device (15) configured to output a second signal in response to second secondary electrons produced by the one or more first devices (11).

The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material includes a metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween, the metal layer having a thickness set to 5 to 40 angstroms.

The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material includes a metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween, the metal layer having a thickness set to 5 to 40 angstroms.

The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer formed of an insulating material includes a metal layer in which a plurality of metal particles formed of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween, the metal layer having a thickness set to 5 to 40 angstroms.

The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer formed of an insulating material includes a metal layer in which a plurality of metal particles formed of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween, the metal layer having a thickness set to 5 to 40 angstroms.

The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. The electron multiplier includes a resistance layer sandwiched between a substrate and a secondary electron emitting layer and configured using a Pt layer two-dimensionally formed on a layer formation surface which is coincident with or substantially parallel to a channel formation surface of the substrate. The resistance layer has a temperature characteristic within a range in which a resistance value at −60° C. is 10 times or less, and a resistance value at +60° C. is 0.25 times or more, relative to a resistance value at a temperature of 20° C.