An electron multiplier production method including a main body portion, and a channel provided in the main body portion to open at one end surface and the other end surface of the main body portion and emits secondary electrons includes a first step of preparing a main body member including the one end surface and the other end surface, a communicating hole for the channel through which the one end surface and the other end surface communicate being provided in the main body member, a second step of forming the channel by forming a deposition layer including at least a resistive layer on an outer surface of the main body member and an inner surface of the communicating hole using an atomic layer deposition method, and a third step of forming the main body portion by removing the deposition layer formed on the outer surface of the main body member.

An electron multiplier production method including a main body portion, and a channel provided in the main body portion to open at one end surface and the other end surface of the main body portion and emits secondary electrons includes a first step of preparing a main body member including the one end surface and the other end surface, a communicating hole for the channel through which the one end surface and the other end surface communicate being provided in the main body member, a second step of forming the channel by forming a deposition layer including at least a resistive layer on an outer surface of the main body member and an inner surface of the communicating hole using an atomic layer deposition method, and a third step of forming the main body portion by removing the deposition layer formed on the outer surface of the main body member.

A metal-channel conversion dynode comprises: a wafer comprising a first face and a second face parallel to the first face and having a thickness less than 1000 m; and a plurality of channels passing through the wafer from the first face to the second face at an angle to a plane of the first face and a plane of the second face. In some embodiments, each inter-channel distance may be substantially the same as the wafer thickness. In some embodiments, the wafer is fabricated from tungsten. In some other embodiments, the wafer comprises a non-electrically conductive material that is fabricated by three-dimensional (3D) printing or other means and that is coated, on its faces and within its channels, with a metal or suitably conductive coating that produces secondary electrons upon impact by either positive or negative ions.

A metal-channel conversion dynode comprises: a wafer comprising a first face and a second face parallel to the first face and having a thickness less than 1000 m; and a plurality of channels passing through the wafer from the first face to the second face at an angle to a plane of the first face and a plane of the second face. In some embodiments, each inter-channel distance may be substantially the same as the wafer thickness. In some embodiments, the wafer is fabricated from tungsten. In some other embodiments, the wafer comprises a non-electrically conductive material that is fabricated by three-dimensional (3D) printing or other means and that is coated, on its faces and within its channels, with a metal or suitably conductive coating that produces secondary electrons upon impact by either positive or negative ions.

An image intensifier is provided in which a thin film (090) is arranged between an output surface of the electron multiplier (040) and the phosphorous screen. The thin film is a semi-conductor or insulator with a crystalline structure comprising a band gap equal or larger than 1 eV, wherein the crystalline structure has a carrier diffusion length equal or larger than 50% of the thickness of the thin film. In addition, the thin film has an anode directed surface which has a negative electron affinity. By way of provisioning a thin film of the above type in the image intensifier, an improvement in mean transfer function of the overall image intensifier is obtained.

An enhanced electron amplifier structure includes a microporous substrate having a front surface and a rear surface, the microporous substrate including at least one channel extending substantially through the substrate between the front surface and the rear surface, an ion diffusion layer formed on a surface of the channel, the ion diffusion layer comprising a metal oxide, a resistive coating layer formed on the first ion diffusion layer, an emissive coating layer formed on the resistive coating layer, and an optional ion feedback layer formed on the front surface of the structure. The emissive coating produces a secondary electron emission responsive to an interaction with a particle received by the channel. The ion diffusion layer, the resistive coating layer, the emissive coating layer, and the ion feedback layer are independently deposited via chemical vapor deposition or atomic layer deposition.

Ion detectors of the type used in scientific instrumentation, such as mass spectrometers. More particularly, a self-contained particle detector includes an enclosure formed in part by a transmission mode secondary electron emissive element, the enclosure defining an internal environment and an external environment, wherein the transmission mode secondary electron emissive element has an externally facing surface and an internally facing surface and is configured such that impact of a particle on the externally facing surface causes emission of one or more secondary electrons from the internally facing surface.

A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on at least a part of the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of MgO, the second film is made of SiO.sub.2, and the second film is thinner than the first film.

A monocrystalline scintillator comprises a monocrystal and an optical plate wherein a first side of the monocrystal is adhered to the optical plate. The monocrystal comprises at least one of a rare earth garnet, a perovskite crystal, a rare-earth silicate, and a monocrystal oxysulphide. The scintillator assembly includes an adhesive adhering the optical plate to the first side of the monocrystal. The adhesive can comprise an ultra-high vacuum compatible adhesive. The adhesive is substantially transparent and has a refractive index matching the optical plate. The scintillator assembly can also include a reflective coating on the second side of the monocrystal. The monocrystalline scintillator assembly can be incorporated in a microchannel plate image intensifier tube to provide improved spatial resolution and temporal response.

The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material is configured using a single metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween.